FMM5007VF
GaAs MMIC
FEATURES
•
•
•
•
•
•
High Output Power: 31.0dBm (typ.)
High Linear Gain: 20dB (typ.)
Low In/Out VSWR
Integrated Output Power Monitor
Impedance Matched Zin/Zout = 50Ω
Small Hermetic Metal-Ceramic Package (VF)
DESCRIPTION
The FMM5007VF is a MMIC amplifier designed for VSAT applications
as a driver or output stage in the 14.0 to 14.5 GHz band.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Rating
12
-7
20
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Linear Gain
Gain Flatness
Input VSWR
Output VSWR
Power Monitor
DC Input Current
DC Input Current
CASE STYLE: VF
Symbol
f
P1dB
G
∆G
VSWRi
VSWRo
Vmon
IDD
IGG
Pout = 30dBm
VDD = 10V
VGG = -5V
f = 14.0 to 14.5 GHz
Test Conditions
Min.
14.0
30.0
18.0
-
-
-
-
-
-
Limit
Typ. Max.
-
31.0
20.0
1.0
2:1
2.3:1
3.5
1000
15
14.5
-
-
1.5
2.3:1
3:1
-
1200
20
Unit
GHz
dBm
dB
dB
-
-
V
mA
mA
VDD = 10V
VGG = -5V
Edition 1.1
August 1999
1
FMM5007VF
GaAs MMIC
OUTPUT POWER vs. FREQUENCY
VDD=10V
VGG=-5V
P1dB
Pin=14dBm
12dBm
OUTPUT POWER vs. INPUT POWER
VDD=10V
VGG=-5V
f=14.25GHZ
34
Output Power (dBm)
32
30
28
26
24
32
Output Power (dBm)
30
28
26
24
10dBm
8dBm
6dBm
4dBm
4
14.0
14.1
14.2
14.3
14.4
14.5
6
8
10
12
14
Input Power (dBm)
Frequency (GHz)
Recommended Bias Circuit
1000pF
50Ω
VGG
1000pF
50Ω
3
2
4
5
6
50Ω
1000pF
Pmon
VDD
50Ω
1000pF
1
VDD
2
FMM5007VF
GaAs MMIC
+j50
+j100
+j25
S11
S22
+90°
S21
S12
+j250
+j10
13.8GHz
50Ω
100
14.7GHz
13.8GHz
0
10
14.7GHz
180°
15
10
5
14.7GHz
13.8GHz
0.02
SCALE FOR |S21|
0°
-j10
13.8GHz
-j250
SCALE FOR |S12|
0.04
14.7GHz
0.06
-j25
-j50
-j100
-90°
S-PARAMETERS
VDD = 10V, VGG = -5V
FREQUENCY
(MHZ)
13800
13900
14000
14100
14200
14300
14400
14500
14600
14700
S11
MAG
.081
.066
.053
.052
.052
.069
.090
.119
.161
.201
S21
ANG
150.5
144.4
141.5
152.1
163.7
177.3
178.7
-178.1
178.0
173.7
S12
ANG
78.2
55.9
46.5
26.7
14.9
-2.6
-15.6
-30.3
-45.6
-59.6
S22
ANG
-109.4
-165.3
-163.0
-128.8
171.8
-123.7
-90.4
-160.1
-164.1
-104.3
MAG
10.412
10.869
10.443
10.511
10.387
10.078
9.953
9.496
9.486
8.887
MAG
.004
.004
.009
.008
.005
.005
.004
.006
.001
.001
MAG
.400
.377
.359
.328
.316
.299
.281
.259
.232
.213
ANG
-45.0
-44.4
-44.8
-43.6
-45.2
-43.5
-43.6
-42.8
-42.5
-37.6
Download S-Parameters, click here
Pin Configuration
1
2
3
6
5
4
3
FMM5007VF
GaAs MMIC
Case Style "VF"
17.78
(0.70)
13.46
(0.530)
8.38
(0.330)
6.4
(0.253)
INDEX
4-C 1.52
(0.060)
1.0 MIN
(0.039)
1
2
3
PIN ASSIGNMENT
Pin
2.44
(0.096)
6.63
(0.261)
8.33
(0.328)
6.63
(0.260)
Symbol
V
DD
RF in
V
GG
Pmon
RF out
V
DD
2-R 1.22
(0.048)
6
5
4
1.
2.
3.
4.
5.
6.
0.125
(0.005)
1.02
(0.040)
3.0 MAX
(0.118)
1.0 MIN
(0.039)
4-0.5
(0.020)
2-0.3
(0.012)
(4-R 0.5)
(0.020)
Unit: mm(inches)
7.88
(0.310)
0.51
(0.020)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
