CMLT2222AG
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2222AG
consists of two (2) isolated 2222A NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 surface
mount package. These PICOmini™ devices have
been designed for small signal general purpose and
switching applications.
MARKING CODE: 2CG
SOT-563 CASE
• Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
75
40
6.0
600
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
C
C/W
O
O
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
TEST CONDITIONS
ICBO
VCB=60V
ICBO
VCB=60V, TA=125 °C
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT)
IC=150mA, IB=15mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=150mA, IB=15mA
VBE(SAT)
IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
hFE
VCE=10V, IC=1.0mA
hFE
VCE=10V, IC=10mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=10V, IC=150mA
hFE
VCE=10V, IC=500mA
(TA=25°C unless otherwise noted)
MIN
MAX
10
10
10
10
75
40
6.0
0.3
1.0
0.6
1.2
2.0
35
50
75
50
100
300
40
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R3 (20-January 2010)
CMLT2222AG
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
kΩ
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
kΩ
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10
-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10
-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
μS
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
μS
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
dB
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: 2CG
R3 (20-January 2010)
w w w. c e n t r a l s e m i . c o m
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