CMLM7405
MULTI DISCRETE MODULE
™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM7405 is a
single PNP Transistor and Schottky Diode packaged
in a space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device:
CMLM3405
• Combination High Current Low VCE(SAT)
Transistor and Low VF Schottky Diode.
SOT-563 CASE
MAXIMUM RATINGS - Case:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp
≤1.0ms
Peak Forward Surge Current, tp= 8.0ms
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
MARKING CODE: C57
SYMBOL
PD
TJ, Tstg
Θ
JA
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
UNITS
mW
°C
°C/W
UNITS
V
V
V
A
A
UNITS
V
mA
A
A
40
25
6.0
1.0
1.5
40
500
3.5
10
CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=40V
VEB=6.0V
IC=100µA
IC=10mA
IE=100µA
IC=50mA, IB=5.0mA
IC=100mA,
IC=200mA,
IC=500mA,
IC=800mA,
IB=10mA
IB=20mA
IB=50mA
IB=80mA
40
25
6.0
25
40
80
150
220
275
MAX
100
100
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
50
75
150
250
400
450
1.1
0.9
IC=1.0A, IB=100mA
IC=800mA, IB=80mA
VCE=1.0V, IC=10mA
R1 (18-January 2010)
CMLM7405
MULTI DISCRETE MODULE
™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
TEST CONDITIONS
MIN
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
ELECTRICAL CHARACTERISTICS - D1:
(TA=25°C)
IR
VR=10V
IR
VR=30V
BVR
IR=500µA
VF
IF=100µA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
CT
IF=500mA
VR=1.0V, f=1.0MHz
MAX
300
UNITS
15
MHz
pF
20
100
40
0.13
0.21
0.27
0.35
0.47
50
µA
µA
V
V
V
V
V
V
pF
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C57
R1 (18-January 2010)
w w w. c e n t r a l s e m i . c o m
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