CMLDM3737
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM3737
consists of Dual N-Channel Enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Very
Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: 7C3
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
• Complementary Dual P-Channel Device: CMLDM5757
SYMBOL
VDS
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ
JA
UNITS
V
V
mA
A
mW
mW
mW
°C
°C/W
MAX
5.0
1.0
1.0
1.2
0.55
0.7
0.9
ID=500mA
ID=500mA
1.58
0.17
0.24
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
SOT-563 CASE
APPLICATIONS:
• Load Switch / Level Shifting
• Battery Charging
• Boost Switch
• Electro-luminescent Backlighting
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
20
8.0
540
1.5
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=0, IS=350mA
VGS=4.5V, ID=540mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
VDS=10V, VGS=4.5V,
VDS=10V, VGS=4.5V,
20
0.45
VDS=10V, VGS=4.5V, ID=500mA
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R1 (28-October 2010)
CMLDM3737
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C)
SYMBOL
TEST CONDITIONS
TYP
MAX
Crss
VDS=16V, VGS=0, f=1.0MHz
20
Ciss
VDS=16V, VGS=0, f=1.0MHz
150
Coss
ton
toff
VDS=16V, VGS=0, f=1.0MHz
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
25
10
25
UNITS
pF
pF
pF
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: 7C3
R1 (28-October 2010)
w w w. c e n t r a l s e m i . c o m
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