CMLD3003DO_10,CMLD3003DO_10 pdf中文资料,CMLD3003DO_10引脚图,CMLD3003DO

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CMLD3003DO_10: 产品描述0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE; 产品类别半导体分立半导体; 文件大小579KB，共3页; 制造商Central Semiconductor

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CMLD3003DO_10概述

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

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CMLD3003DO

CMLD3003DOG

SURFACE MOUNT

DUAL, ISOLATED, OPPOSING

LOW LEAKAGE SILICON

SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD3003DO

and CMLD3003DOG types contain Two (2) Isolated

Opposing Configuration, Silicon Switching Diodes,

manufactured by the epitaxial planar process, epoxy

molded in a PICOmini™ surface mount package.

These devices are designed for switching applications

requiring extremely low leakage.

MARKING CODES:

CMLD3003DO: C30

CMLD3003DOG: 3CG

SOT-563 CASE

• The CMLD3003DOG is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Average Rectified Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0µs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

IFRM

IFSM

TJ, Tstg

180

200

600

700

2.0

1.0

250

-65 to +150

500

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

BVR

VR=125V

VR=125V, TA=150°C

VR=180V

VR=180V, TA=150°C

IR=5.0µA

IF=1.0mA

IF=10mA

IF=50mA

IF=100mA

IF=200mA

IF=300mA

VR=0, f=1.0MHz

200

0.62

0.72

0.80

0.83

0.87

0.90

0.72

0.83

0.89

0.93

1.10

1.15

4.0

1.0

3.0

5.0

UNITS

µA

R2 (18-January 2010)

CMLD3003DO_10相似产品对比

	CMLD3003DO_10	CMLD3003DO	CMLD3003DOG
描述	0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
是否无铅	-	含铅	含铅
针数	-	6	6
Reach Compliance Code	-	_compli	compli

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