CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
consists of one 2222A NPN transistor and an
individually isolated complementary 2907A PNP
transistor, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K70
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
NPN (Q1)
75
40
6.0
PNP (Q2)
60
60
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
SOT-363 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
ICBO
VCB=60V
-
10
-
-
ICBO
VCB=50V
-
-
-
10
ICBO
VCB=60V, TA=125°C
-
10
-
-
ICBO
VCB=50V, TA=125°C
-
-
-
10
IEBO
VEB=3.0V
-
10
-
-
ICEV
VCE=60V, VEB(OFF)=3.0V
-
10
-
-
ICEV
VCE=30V, VEB(OFF)=500mV
-
-
-
50
BVCBO
IC=10μA
75
-
60
-
BVCEO
IC=10mA
40
-
60
-
BVEBO
IE=10μA
6.0
-
5.0
-
VCE(SAT)
IC=150mA, IB=15mA
-
0.3
-
0.4
VCE(SAT)
IC=500mA, IB=50mA
-
1.0
-
1.6
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
-
1.3
VBE(SAT)
IC=500mA, IB=50mA
-
2.0
-
2.6
hFE
VCE=10V, IC=0.1mA
35
-
75
-
hFE
VCE=10V, IC=1.0mA
50
-
100
-
hFE
VCE=10V, IC=10mA
75
-
100
-
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
-
-
-
hFE
VCE=10V, IC=500mA
40
-
50
-
fT
VCE=20V, IC=20mA, f=100MHz
300
-
-
-
fT
VCE=20V, IC=50mA, f=100MHz
-
-
200
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
8.0
-
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
-
25
-
-
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
R4 (13-January 2010)
CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
Cib
VEB=2.0V, IC=0, f=1.0MHz
-
-
-
30
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
-
-
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
-
-
hre
VCE=10V, IC=1.0mA, f=1.0kHz
-
8.0
-
-
hre
VCE=10V, IC=10mA, f=1.0kHz
-
4.0
-
-
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
-
-
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
-
-
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
-
-
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
-
-
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
-
150
-
-
NF
VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
-
4.0
-
-
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
-
-
45
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
10
-
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
25
-
40
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
100
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
225
-
-
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
80
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
-
60
-
-
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
30
UNITS
pF
kΩ
kΩ
x10
-4
x10
-4
μS
μS
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: K70
R4 (13-January 2010)
w w w. c e n t r a l s e m i . c o m
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