CMKD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE SILICON
SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263DO
contains two (2) galvanically isolated, high voltage, low
VF Silicon Schottky diodes with an opposing Anode/
Cathode configuration, epoxy molded in a SOT-363
surface mount package. This ULTRAmini™ device has
been designed for fast switching applications requiring a
low forward voltage drop.
MARKING CODE: 63D
SOT-363 CASE
FEATURES:
• Dual Opposing (DO) Schottky Diodes
• High Voltage (70V)
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
• Low Forward Voltage
• Galvanically Isolated
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ
JA
70
15
50
250
-65 to +150
500
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
BVR
VF
CT
trr
VR=50V
IR=10μA
IF=1.0mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
98
70
395
410
2.0
5.0
200
UNITS
nA
V
mV
pF
ns
R3 (13-January 2010)
This datasheet has been downloaded from:
www.EEworld.com.cn
Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
