电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CMASH-4_10

产品描述SURFACE MOUNT SILICON SCHOTTKY DIODE
文件大小345KB,共3页
制造商Central Semiconductor
下载文档 全文预览

CMASH-4_10概述

SURFACE MOUNT SILICON SCHOTTKY DIODE

文档预览

下载PDF文档
CMASH-4
SURFACE MOUNT
SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMASH-4 is a
high quality Schottky Diode designed for applications
where very small size and operational efficiency are
prime requirements.
MARKING CODE: A
SOD-923 CASE
APPLICATIONS:
DC / DC Converters
Voltage Clamping
Protection Circuits
Battery powered applications including
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Surge Current, tp=8.3ms
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
FEATURES:
Current (IO=200mA)
Low Forward Voltage Drop (VF=0.35V TYP @ 1.0mA)
Low Reverse Current (25nA TYP @ 30V)
Extremely Fast Switching (5ns Max)
Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile
FEMTOmini
Surface Mount Package.
TM
SYMBOL
VRRM
IO
IFSM
PD
TJ
Tstg
Θ
JA
UNITS
40
200
600
100
-65 to +125
-65 to +150
1000
V
mA
mA
mW
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=30V
25
BVR
IR=10μA
40
VF
IF=1.0mA
0.35
VF
IF=15mA
0.55
VF
CT
trr
IF=40mA
VR= 0, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
0.77
MAX
200
0.38
0.65
1.00
5.0
5.0
UNITS
nA
V
V
V
V
pF
ns
R1 (26-May 2010)

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2909  2182  2574  1876  2647  46  35  11  17  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved