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TMPG06-24AHE3_A/C

产品描述Trans Voltage Suppressor Diode, 400W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon,
产品类别分立半导体    二极管   
文件大小86KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

TMPG06-24AHE3_A/C概述

Trans Voltage Suppressor Diode, 400W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon,

TMPG06-24AHE3_A/C规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明O-PALF-W2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time12 weeks
其他特性EXCELLENT CLAMPING CAPABILITY
最大击穿电压25.2 V
最小击穿电压22.8 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
最高工作温度185 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散1 W
参考标准AEC-Q101
最大重复峰值反向电压20.5 V
表面贴装NO
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
TMPG06-10A thru TMPG06-43A
www.vishay.com
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
MPG06
• Low incremental resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 43 V
8.55 V to 36.8 V
400 W
1.0 W
40 A
185 °C
Uni-directional
MPG06
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
MPG06, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)(2)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half
sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
(2)
Operating junction and storage temperature range
(1)
SYMBOL
(fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
400
See next table
1.0
40
3.5
-65 to +185
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 04-Nov-16
Document Number: 88404
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

TMPG06-24AHE3_A/C相似产品对比

TMPG06-24AHE3_A/C TMPG06-16AHE3_A/C TMPG06-11AHE3_A/C TMPG06-12AHE3_A/C TMPG06-30AHE3_A/C TMPG06-33AHE3_A/C TMPG06-36AHE3_A/C TMPG06-43AHE3_A/C
描述 Trans Voltage Suppressor Diode, 400W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, MPG06, 2 PIN Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, Trans Voltage Suppressor Diode, 400W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon,
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks
其他特性 EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
最大击穿电压 25.2 V 16.8 V 11.6 V 12.6 V 31.5 V 34.7 V 37.8 V 45.2 V
最小击穿电压 22.8 V 15.2 V 10.5 V 11.4 V 28.5 V 31.4 V 34.2 V 40.9 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3
最大非重复峰值反向功率耗散 400 W 400 W 400 W 400 W 400 W 400 W 400 W 400 W
元件数量 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 185 °C 185 °C 185 °C 185 °C 185 °C 185 °C 185 °C 185 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W
参考标准 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
最大重复峰值反向电压 20.5 V 13.6 V 9.4 V 10.2 V 25.6 V 28.2 V 30.8 V 36.8 V
表面贴装 NO NO NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
厂商名称 Vishay(威世) - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
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