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MV7654

产品描述Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小76KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

MV7654概述

Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

MV7654规格参数

参数名称属性值
厂商名称Microsemi
包装说明O-LALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
应用ULTRA FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-LALF-W2
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
最大重复峰值反向电压150 V
最大反向恢复时间0.03 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

MV7654文档预览

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
VOIDLESS - HERMETICALLY- SEALED
ULTRAFAST RECOVERY GLASS RECTIFIERS
Reference MIL-PRF-19500/477
DEVICES
LEVELS
MV7654
Bare copper lead version of 1N5811
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are available in both leaded and surface mount MELF package
configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
TXV
Equivalent
FEATURES
Voidless hermetically sealed glass package
Extremely robust construction
Internal “Category
I”
Metallurgical bonds
B-Body
Leaded Package
MAXIMUM RATINGS
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 6 A @ T
L
= 75ºC at 3/8 inch lead length (see
note 1)
Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with Tungsten slugs
TERMINATIONS: Axial-leads are Bare Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
T4-LDS-0169 Rev. 1 (101075)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
ELECTRICAL CHARACTERISTICS @ 30oC Case Temperature
WORKING BREAKDOWN AVERAGE AVERAGE
VOLTAGE RECTIFIED RECTIFIED
PEAK
(MIN.)
CURRENT CURRENT
REVERSE
I
O1
I
O2
VOLTAGE
@ 100μA
@T
L
=75ºC @T
A
=55ºC
V
RWM
V
BR
(Note 1)
Note 2
VOLTS
VOLTS
AMPS
MAXIMUM
FORWARD
VOLTAGE
@ 4A
(8.3 ms pulse)
V
F
VOLTS
25 C
MV7654
150
160
6.0
3.0
0.875
o
TYPE
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
μA
25 C
5
o
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
AMPS
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
ns
100 C
0.800
o
125 C
525
125
30
o
NOTE 1:
Leaded: Rated at T
L
= 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T
L
above 75ºC.
NOTE 2:
Derate linearly at 25 mA/ºC above T
A
= 55ºC. This rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC
NOTE 3:
T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= 0.10 A and di/dt = 100 A/µs min
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a
peak reverse current is reached.
T4-LDS-0169 Rev. 1 (101075)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
PACKAGE DIMENSIONS
Ltr
BD
BL
LD
LL
NOTE:
Dimensions
MV7654
Inches
Millimeters
Min
Max
Min
Max
.115
.142 2.92
3.61
.130
.300
3.30
7.62
.036
.042
0.91
1.07
.900
1.30 22.86 33.02
Notes
4
3
3
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BL shall include the entire body including slugs and sections of the lead over which the diameter is
uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
Lead Tolerance = + .002 -.003 in
*Includes sections of the lead or fillet over which the lead diameter is uncontrolled.
T4-LDS-0169 Rev. 1 (101075)
Page 3 of 3
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