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MBR1030CT

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 30V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小141KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
标准
下载文档 详细参数 全文预览

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MBR1030CT概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 30V V(RRM), Silicon, TO-220AB,

MBR1030CT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Semi-Conductor Co Ltd
包装说明R-PSFM-T3
Reach Compliance Codeunknown
其他特性FREE WHEELING DIODE
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.84 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流125 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压30 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

MBR1030CT文档预览

BL
FEATURES
GALAXY ELECTRICAL
MBR1030CT - - - MBR1060CT
VOLTAGE RANGE: 30 - 60 V
CURRENT: 10 A
DUAL
SCHOTTKY RECTIFIERS
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Weight: 0.08 ounce, 2.24 gram s
Pos ition: Any
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
1030CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device11111111
m
rectified current @T
C
= 105°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage per leg
(NOTE 1)
MBR
1035CT
35
25
35
MBR
MBR
MBR
MBR
1040CT
1045CT
1050CT 1060CT
40
28
40
10.0
125.0
45
32
45
50
35
50
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
(I
F
=5.0A,T
C
=125 )
(I
F
=5.0A ,T
C
=25 )
(I
F
=10 A ,T
C
=25
)
0.57
0.70
0.80
0.95
0.1
15.0
30
-
55
---- + 150
-
55
---- + 150
www.galaxycn.com
V
F
0.70
0.84
V
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
mA
K/W
Maximum thermal resistance per leg
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. 2.0
µ
s pulse width, f =1.0KH
Z
3. Thermal resistance f rom junction to case.
Document Number 0267017
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CURRENT DERATING CURVE
12.5
MBR1030CT - - - MBR1060CT
cc
PEAK FORWARD SURGE
CURRENT,AMPERES
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PERLEG
150
T
J
=T
J
max.
8.3ms Single Half Sine Wave
(JEDEC Method)
Resistive or inductive Load
AVERAGE FORWARD
CURRENT,AMPERES
10
7.5
5.0
2.5
0
125
100
75
50
25
0
0
50
100
150
1
10
100
CASE TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
11111vCHARACTERISTIC
PERLEG
INSTANTANEOUS FORWARD
CURRENT,AMPERES
40
10
T
J
=125
Pulse Width=300
µ
s
1% Duty Cycle
T
J
=25
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
bn
111
INSTANTANEOUS REVERSE
CURRENT,MILLIAMPERES
40
10
T
J
=125
1
T
J
=75
1
0.1
0.1
MBR1030CT-MBR1045CT
MBR1050CT&MBR1060CT
0.01
MBR1030CT-MBR1045CT
MBR1050CT&MBR1060CT
T
J
=25
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
1FIG.5--TYPICAL
JUNCTION CAPACITANCE PERLEG
4000
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
PERLEG
cc
c
JUNCTION CAPACITANCE, pF
1000
TRANSIENT THERMAL
IMPEDANCE, /W
T
J
=25
f=1.0MHz
Vsig=50MVp-p
100
10
100
1
10
0.1
MBR1030CT-MBR1045CT
MBR1050CT&MBR1060CT
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATON,Sec.
www.galaxycn.com
Document Number 0267017
BL
GALAXY ELECTRICAL
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