To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
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circuit application examples contained in these materials.
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contained therein.
HVD144
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-1413 (Z)
Rev.0
Sep. 2001
Features
•
Adopting the trench structure improves low capacitance.(C = 0.45 pF max)
•
Low forward resistance. (rf = 2.0
Ω
max)
•
Low operation current.
•
Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
HVD144
Laser Mark
T4
Package Code
SFP
Outline
Cathode mark
Mark
1
T4
2
1. Cathode
2. Anode
HVD144
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
F
Pd
Tj
Tstg
Value
30
100
150
125
−55
to +125
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *
1
Symbol
I
R
V
F
C
r
f
—
Min
—
—
—
—
100
Typ
—
—
—
—
—
Max
100
0.9
0.45
2.0
—
Unit
nA
V
pF
Ω
V
Test Condition
V
R
= 30 V
I
F
= 2 mA
V
R
= 1 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
C = 200 pF, R = 0
Ω,
Both forward and
reverse direction 1 pulse.
Notes
:
1. Failure criterion ; I
R
>
100 nA at V
R
= 30 V
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Sep. 2001, page 2 of 6
HVD144
Main Characteristic
10
-2
10
-8
10
Forward current I
F
(A)
-4
10
-9
Reverse current I
R
(A)
10
-10
10
-11
Ta = 75
°
C
Ta = 50
°
C
10
-6
Ta = 75
°
C
10
-8
Ta = 50
°
C
Ta = 25
°
C
10
-12
Ta = 25
°
C
10
-10
10
-13
10
-12
0
0.2
0.4
0.6
0.8
1.0
10
-14
0
10
20
30
40
50
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
1
Forward resistance r
f
(Ω)
f = 100MHz
10
Capacitance C (pF)
1.0
10
0
0.1
0.1
1.0
Reverse voltage V
R
(V)
10
10
-1
10
-4
10
-3
10
-2
10
-1
Forward current I
F
(A)
Fig.4 Forward resistance vs. Forward current
Fig.3 Capacitance vs. Reverse voltage
Rev.0, Sep. 2001, page 3 of 6
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