BYP53 / BYP54
25A Silicon Power Rectifier Diode
Part no.
Description
The BYP53/54 are plastic sealed 25A- diodes,
which are available in different reverse voltage
classes up to 800V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
•
•
•
•
Applications
•
•
•
•
Forward current 25A
Reverse voltage 75V – 800V
Hermetic press-fit package
Available in different modifications of the
package
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
BYP53:
1 - cathode
2 - anode
BYP54:
1 - anode
2 - cathode
Typical application circuit
Six pulse
bridge
connection
~
~
~
1
3 x BYP53-1200
3 x BYP54-1200
2
+
-
Ordering information
Device
BYP53-75; …; BYP53-800
BYP54-75; …; BYP54-800
Quantity per box
400
400
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYP53- black, BYP54 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYP53………………………………... diode type
400………………………………….. repetitive peak reverse voltage V
RRM
(in V) 400
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
1
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BYP53 / BYP54
Absolute maximum ratings
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYP53-75
BYP53-100
BYP53-150
BYP53-200
Repetitive
peak
reverse
voltage
BYP53-300
BYP53-400
BYP53-500
BYP53-600
BYP53-700
BYP53-800
BYP54-75
BYP54-100
BYP54-150
BYP54-200
BYP54-300
BYP54-400
BYP54-500
BYP54-600
BYP54-700
BYP54-800
I
FAV
I
FSM
350
900
Maximum rated value
∫i²dt
780
Repetitive peak forward current
Effective forward current
Junction temperature
Storage temperature range
I
FRM
=π*I
FAV
I
FRMS
T
Jmax
T
stg
79
45
175
- 50 to + 140
A
A
°C
°C
A²s
V
RRM
Symbol
75
100
150
200
300
400
500
600
700
800
25
425
Surge forward current
A
A
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
f = >15 Hz
V
T
c
= 140°C
Unit
Test condition
Forward current, arithmetic value
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
2
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BYP53 / BYP54
Thermal resistance
Parameter
Junction to case
Symbol
R
θJC
Value
1.2
Unit
°C/W
Thermal characteristics
30
25
20
15
10
5
0
-50
-25
0
25
50
T
C
(°C)
75
100
108°C
I
F
(A)
140°C
125
150
Forward current derating diagram
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
30
25
20
15
10
5
0
0,75
I
F
(A)
0,8
0,85
V
F
(V)
0,9
0,95
1
Forward voltage characteristic
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
3
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BYP53 / BYP54
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
Parameter
Forward
voltage
BYP53-75...800
BYP54-75...800
Symbol
V
F
Min.
-
Typ.
0.95
Max.
1.1
Unit
V
Test contitions
I
F
= 25 A,
measuring time
10ms (half-sine
wave)
I
F
= 35 A,
Forward
voltage
BYP53-75...800
(information BYP54-75...800
values)
BYP53-75...150
BYP54-75...150
BYP53-200...800
Reverse
BYP54-200...800
current
BYP53-75...400
BYP54-75...400
BYP53-500...800
BYP54-500...800
Threshold voltage (information
value)
Slope resistance (information
value)
V
F
-
-
-
-
-
-
-
0.66
5.75
1.2
3
V
I
RRM
-
-
I
RRM
-
V
(FO)
r
F
-
-
0.1
-
-
1.5
0.25
mA
T
J
= 140°C, at
V
RRM
mA
at V
RRM
V
mΩ
T
J
= 175°C
T
J
= 175°C
Options: Electrical characteristics for parallel connecting
(at T
amb
= 25°C unless otherwise stated)
Option
1
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYP53-300…800 and
BYP54-300…800)
Symbol
∆V
F
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
I
F
= 25 A, measuring
time 10ms (half-sine
wave)
at V
RRM
2
I
R
-
-
0.01
mA
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
4
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BYP53 / BYP54
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
D
D1
D2
D3
MIN
18,00
5,90
2,10
15,50
12,72
11,50
1,33
Millimeters
TYP
18,50
6,10
2,30
15,70
12,77
11,70
1,36
Inches
TYP
0,728
0,240
0,091
0,618
0,503
0,461
0,054
MAX
19,00
6,30
2,50
15,90
12,82
11,90
1,39
MIN
0,709
0,232
0,083
0,610
0,501
0,453
0,052
MAX
0,748
0,248
0,098
0,626
0,505
0,469
0,055
Europe
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D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia Ltd)
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit
www.zetex.com/offices
Zetex products are distributed worldwide. For details, see
www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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