PZT5401
PNP Epitaxial Planar Transistor
P b
Lead(Pb)-Free
BASE
1
3
EM ITTER
COLLECTOR
2, 4
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation T
a
=25°C
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
P
D
Tj
Tstg
Value
-160
-150
-5
-600
1.5
+150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I
C
=-100µA, I
E
=0
Collector-Emitter Breakdown Voltage
(1)
I
C
=-1mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=-10µA, I
C
=0
Collector Cut-O Current
V
CB
=-120V, I
E
=0
Emitter-Cut-O Current
V
EB
=-3V, I
C
=0
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-160
-150
-5
-
-
Max
-
-
-
-
-
Max
-
-
-
-50
-50
Unit
V
V
V
nA
nA
WEITRON
http://www.weitron.com.tw
1/4
14-Aug-07
PZT5401
ELECTRICAL CHARACTERISTICS
(T
A
=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
Collector-Emitter Saturation Voltage
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
Base-Emitter Saturation Voltage
I
C
=-10A, I
B
=-1mA
I
C
=-50A, I
B
=-5mA
h
FE1
h
FE2
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
50
80
50
-
-
-
-
-
160
-
-
-
-
-
-
400
-
-200
-500
-1
-1
-
mV
V
DYNAMIC CHARACTERISTICS
Transition Frequency
V
CE
=-10V, I
C
=-10mA, f=100MHz
Output Capacitance
V
CB
=-10V, I
E
=0, f=1MHz
f
T
C
ob
120
-
-
-
300
6
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
A
80-200
N
100-240
C
160-400
WEITRON
http://www.weitron.com.tw
2/4
14-Aug-07
单片机
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