MJE3055
Plastic-Encapsulate Power Transistors
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Total Device Disspation T
C
=25 C
Derate above 25 C
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj , Tstg
Value
60
70
5.0
10
75
0.6
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
W/ C
C
Operating and Storage Junction Temperature Range
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0)
Collector Cutoff Current (VCB= 70 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0Vdc, IC =0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
60
70
Max
-
-
-
1.0
5.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
5.0
-
-
WEITRON
MJE3055
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain (1)
(IC= 4 Adc, VCE= 4 Vdc)
(IC= 10 Adc, VCE= 4 Vdc)
Collector-Emitter Saturation Voltage (1)
(IC= 4 Adc, IB= 400 mAdc)
(IC= 10 Adc, IB= 3.3 Adc)
Base-Emitter On Voltage (1)
(IC= 4 Adc, V
CE
= 4 Vdc)
Current-Gain-Bandwidth Product
(IC= 500 mAdc, VCE=10 Vdc)
Note:
_
_
1. Pulse Test: PW < 300us, Duty Cycle < 2.0%
VBE(ON)
hFE
(1)
hFE
(2)
VCE(sat)
20
5
-
-
-
-
-
-
-
-
-
100
-
1.1
8
1.8
-
-
Vdc
Vdc
fT
2
MHz
WEITRON
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