MT4S32U
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S32U
VHF~UHF Band Low Noise Amplifier Applications
·
·
Low Noise Figure: NF = 1.4 dB (f = 2 GHz)
High Gain: |S21e|
2
= 13.5 dB (f = 2 GHz)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Rating
8
4.5
1.5
15
7.5
67.5
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
―
2-2K1A
Marking
2
1
Type name
JEITA
TOSHIBA
Weight: 0.006 g (typ.)
U 4
3
4
1
2002-01-23
MT4S32U
Microwave Characteristics
(Ta
=
25°C)
Characteristics
Transition frequency
Insertion gain
Symbol
f
T
|S21e| (1)
|S21e| (2)
NF(1)
NF(2)
2
2
Test Condition
V
CE
=
3 V, I
C
=
10 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
1 GHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
1 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
Min
13
16.5
11.5
¾
¾
Typ.
16
19
13.5
1.0
1.4
Max
¾
21.5
16.5
1.4
1.8
Unit
GHz
dB
dB
dB
dB
Noise figure
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
C
ob
C
re
Test Condition
V
CB
=
8 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
10 mA
V
CB
=
3 V, I
E
=
0, f
=
1 MHz
(Note)
Min
¾
¾
50
¾
¾
Typ.
¾
¾
¾
0.4
0.2
Max
1
1
150
0.65
0.45
Unit
mA
mA
¾
pF
pF
Note:
C
re
is measured by 3 terminal method with capacitance bridge.
CAUTION: This device electrostatic sensitivity. Please handle with caution.
2
2002-01-23
MT4S32U
C
ob
, C
re
– V
CB
1
Collector output capacitance C
ob
(pF)
Reverse transfer capacitance C
re
(pF)
f
=
1 MHz
Ta
=
25°C
Cob
0.5
0.3
Cre
0.1
0.1
0.3
0.5
1
3
5
10
Collector-base voltage V
CB
(V)
|S21e|
-
I
C
25
f
=
1 GHz
Ta
=
25°C
25
f
=
2 GHz
Ta
=
25°C
2
|S21e|
-
I
C
2
(dB)
20
(dB)
|S21e|
2
VCE
=
3 V
20
|S21e|
2
15
VCE
=
1 V
15
VCE
=
3 V
Insertion gain
10
Insertion gain
10
VCE
=
1 V
5
5
0
1
3
10
30
100
0
1
3
10
30
100
Collector current
I
C
(mA)
Collector current
I
C
(mA)
f
T
– I
C
25
3
Ta
=
25°C
VCE
=
1 V
f
=
1 GHz
VCE
=
3 V
15
VCE
=
1 V
10
Ta
=
25°C
2
NF – I
C
(GHz)
fT
Transition frequency
Noise figure
NF
(dB)
20
1
5
0
1
3
10
30
100
0
1
3
10
30
100
Collector current
I
C
(mA)
Collector current
I
C
(mA)
3
2002-01-23
MT4S32U
NF – I
C
3
VCE
=
3 V
f
=
1 GHz
3
VCE
=
1 V
f
=
2 GHz
NF – I
C
(dB)
2
(dB)
Ta
=
25°C
Ta
=
25°C
2
NF
Noise figure
1
Noise figure
1
3
10
30
NF
1
0
0
100
1
3
10
30
100
Collector current
I
C
(mA)
Collector current
I
C
(mA)
NF – I
C
3
VCE
=
3 V
30
|S21e|
-
f
VCE
=
1 V
Ta
=
25°C
2
(dB)
Ta
=
25°C
2
2
(dB)
|S21e|
20
IC
=
10 mA
f
=
2 GHz
Noise figure
NF
1
Insertion gain
10
IC
=
3 mA
0
1
3
10
30
100
0
100
300
1000
300
10000
Collector current
I
C
(mA)
Frequency f
(MHz)
|S21e|
-
f
30
VCE
=
3 V
Ta
=
25°C
2
2
(dB)
|S21e|
20
IC
=
10 mA
Insertion gain
10
IC
=
3 mA
0
100
300
1000
300
10000
Frequency f
(MHz)
4
2002-01-23
MT4S32U
S parameter
V
CE
=
1 V
Frequency
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
Mag.
0.870
0.850
0.822
0.793
0.759
0.731
0.700
0.675
0.653
0.635
0.617
0.607
0.595
0.588
0.580
0.577
0.572
0.569
0.566
0.563
0.561
0.560
0.556
0.558
0.554
0.556
Zo
=
50
W
, Ta
=
25°C
°
I
C
=
3 mA
S11
Ang.
-13.0
-27.0
-39.8
-51.7
-63.1
-73.5
-83.8
-92.5
-101.1
-108.5
-115.9
-122.3
-128.6
-134.1
-139.6
-144.3
-148.8
-153.2
-157.5
-161.2
-164.6
-168.0
-171.3
-174.2
-177.4
179.9
Mag.
8.870
8.591
8.222
7.782
7.365
6.888
6.465
6.024
5.659
5.307
4.986
4.695
4.420
4.206
3.988
3.814
3.600
3.429
3.277
3.164
3.048
2.902
2.790
2.697
2.637
2.533
S21
Ang.
169.4
160.0
151.0
143.0
135.5
128.5
122.3
116.6
111.3
106.8
102.2
98.2
94.0
90.4
86.9
83.9
80.6
77.6
74.5
71.8
69.5
67.1
64.2
61.5
59.3
57.5
Mag.
0.025
0.044
0.062
0.080
0.093
0.106
0.115
0.123
0.130
0.135
0.139
0.143
0.146
0.148
0.149
0.152
0.154
0.156
0.157
0.156
0.159
0.160
0.159
0.162
0.162
0.162
S12
Ang.
87.6
73.4
65.9
60.2
55.3
50.2
44.7
40.8
37.6
34.8
32.1
29.4
27.3
25.5
23.6
22.6
20.7
20.2
18.4
17.9
17.0
15.9
15.6
14.8
13.9
13.7
Mag.
0.980
0.957
0.916
0.866
0.814
0.761
0.710
0.661
0.619
0.576
0.541
0.508
0.477
0.450
0.422
0.402
0.382
0.364
0.346
0.329
0.316
0.302
0.288
0.278
0.264
0.256
S22
Ang.
-9.9
-19.1
-28.1
-36.4
-43.7
-50.5
-56.9
-62.6
-67.7
-72.8
-77.2
-81.4
-85.3
-89.2
-92.8
-96.2
-99.7
-102.5
-105.9
-108.2
-111.6
-114.0
-117.1
-119.5
-122.8
-124.7
5
2002-01-23
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
