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CBS05F30

产品描述0.5 A, 30 V, SILICON, SIGNAL DIODE
产品类别分立半导体    二极管   
文件大小166KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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CBS05F30概述

0.5 A, 30 V, SILICON, SIGNAL DIODE

CBS05F30规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PBCC-N2
针数2
制造商包装代码CST2B
Reach Compliance Codeunknow
ECCN代码EAR99
Is SamacsysN
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PBCC-N2
元件数量1
端子数量2
最高工作温度125 °C
最大输出电流0.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
表面贴装YES
技术SCHOTTKY
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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CBS05F30
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
CBS05F30
High-Speed Switching Application
Unit: mm
0.7
±
0.02
0.25±0.02 0.65±0.02
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Rating
30
500 *
3
125
−55
to 125
Unit
V
mA
A
°C
°C
+0.02
0.38 -0.03
CATHODE MARK
1.2±0.05
0.05±0.03
0.8
±
0.05
0.05
±
0.03
*:
Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad
dimensions of 4 mm × 4 mm.
CST2B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
reliability significantly even if the operating conditions (i.e. operating
JEITA
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
1-1V1B
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Weight: 0.7 mg (typ.)
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
V
R
= 30 V
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.23
0.31
0.38
5
118
Max
0.45
50
μA
pF
V
Unit
Marking
Equivalent Circuit
(Top View)
73
1
2010-05-11

 
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