Advanced Technical Information
MWI 60-06 G6K
I
C25
= 60 A
= 600 V
V
CES
V
CE(sat) typ.
= 2.3 V
IGBT Module
Sixpack
Square RBSOA
10, 23
14
13
NTC
18
17
22
21
11, 12
15, 16
19, 20
8
7
6
5
9, 24
4
3
2
1
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 10
Ω;
T
VJ
= 125°C
RBSOA; clamped inductive load; L = 100 µH
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±
20
60
41
80
V
CES
180
W
V
V
A
A
A
Features
• IGBTs
- low saturation voltage
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
• UL registered
E72873
Typical Applications
• AC drives
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.0
3
1.2
100
20
20
130
80
0.6
0.5
2500
95
0.25
2.8
5
0.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.7 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thCH
I
C
= 30 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.25 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 400 V; I
C
= 30 A
V
GE
= ±15 V; R
G
= 3
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 30 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
0540
Advanced Technical Information
MWI 60-06 G6K
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
48
33
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
R
thCH
Conditions
I
F
= 30 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -400 A/µs; T
VJ
= 100°C
V
R
= 300 V; V
GE
= 0 V
(per Diode)
Characteristic Values
min.
typ. max.
2.2
1.7
5
65
0.3
2.6
V
V
A
ns
0.9 K/W
K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.1 V; R
0
= 21.5 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.20 V; R
0
= 19 m
Ω
Thermal Response
Temperature Sensor NTC
Symbol
R
25
B
25/85
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Symbol
d
S
d
A
Weight
Conditions
operating
Maximum Ratings
-40...+125
-40...+150
-40...+125
2500
2.0 - 2.2
°C
°C
°C
V~
Nm
Dimensions in mm (1 mm = 0.0394")
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.45
4.7
3510
5.0 kΩ
K
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Conditions
Creepage distance on surface
Strike distance in air
Characteristic Values
min.
typ. max.
12.7
12.7
40
mm
mm
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-2
0540
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
