BUL26D
BULK26D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
s
s
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
o
C
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
1
3
2
1
2
3
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL26D and BULK26D are manufactured
using medium voltage Multi Epitaxial Planar
technology for high switching speeds and
medium voltage capability. They use a Cellular
Emitter structure with planar edge termination to
enhance switching speeds while maintaining a
wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
C ES
V
CEO
V
EBO
I
C
I
CM
I
B
I
B M
P
tot
T
stg
T
j
Parameter
BUL26D
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature Range
Max. Operating Junction Temperature
o
Value
BULK26D
600
300
12
4
8
2
4
60
-65 to 150
150
50
Unit
V
V
V
A
A
A
A
W
o
o
C
C
1/7
December 1994
BUL26D
THERMAL DATA
TO220
R
thj-cas e
R
thj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
o
SOT-82
2.5
62.5
o
o
Max
Max
2.08
62.5
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
Symbol
I
CE S
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 600 V
V
CE
= 300 V
I
C
= 100 mA
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
V
CE
= 5 V
V
CE
= 3 V
I
B1
= 0.6 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.6 A
R
BB
= 0
Ω
L = 200
µH
10
15
0.8
70
1.2
100
3
300
12
0.5
0.7
1
1.1
1.2
1.3
45
1.3
130
µs
ns
µs
ns
V
Min.
Typ.
Max.
200
250
Unit
µA
µA
V
V
V
V
V
V
V
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
V
CE (sat)
∗
Emitter-Base Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage
V
B E(sat)
∗
h
FE
∗
I
C
= 10 mA
I
C
= 1 A
I
C
= 3 A
V
BE (off)
= -5 V
V
CL
= 250 V
I
C
= 3 A
V
BE (off)
= -5 V
V
CL
= 250 V
T
j
= 125
o
C
I
C
= 2.5 A
t
s
t
f
t
s
t
f
V
f
∗
Pulsed: Pulse durati on = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
Derating Curves
2/7
BUL26D
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/7
BUL26D
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/7
BUL26D
TO-220 MECHANICAL DATA
DIM.
MIN.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
13.0
2.65
15.25
6.2
3.5
3.75
0.49
0.61
1.14
1.14
4.95
2.4
10.0
16.4
14.0
2.95
15.75
6.6
3.93
3.85
0.511
0.104
0.600
0.244
0.137
0.147
4.40
1.23
2.40
1.27
0.70
0.88
1.70
1.70
5.15
2.7
10.40
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.645
0.551
0.116
0.620
0.260
0.154
0.151
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
0.050
0.027
0.034
0.067
0.067
0.203
0.106
0.409
inch
TYP.
MAX.
0.181
0.051
0.107
A
C
D1
L2
F1
D
G1
E
Dia.
F2
F
L5
L7
L6
L9
L4
G
H2
P011C
5/7
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