Preliminary
Datasheet
RJK4018DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.085
typ. (at I
D
= 21.5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0215EJ0200
(Previous: REJ03G1490-0100)
Rev2.00
Dec 03, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note1
Ratings
400
30
43
129
43
129
14
11.2
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0215EJ0200 Rev2.00
Dec 03, 2010
Page 1 of 6
RJK4018DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
400
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.085
4100
465
48
50
134
129
96
99
22
43
0.93
360
Max
—
1
±0.1
4.5
0.100
—
—
—
—
—
—
—
—
—
—
1.55
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 21.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 21.5 A
V
GS
= 10 V
R
L
= 9.3
Rg = 10
V
DD
= 320 V
V
GS
= 10 V
I
D
= 43 A
I
F
= 43 A, V
GS
= 0
Note4
I
F
= 43 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0215EJ0200 Rev2.00
Dec 03, 2010
Page 2 of 6
RJK4018DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
Ta = 25°C
Pulse Test
10 V
6.8 V
Drain Current I
D
(A)
Drain Current I
D
(A)
100
PW
10
μ
s
7V
6.6 V
80
=
6.4 V
10
0
10
μ
s
60
6.2 V
6V
1
0.1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
1000
40
5.8 V
5.6 V
20
5.4 V
V
GS
= 5.2 V
0.01
0.1
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Tc = 75°C
1
25°C
0.1
0.1
−25°C
0.01
0
2
4
6
8
10
0.01
1
10
100
1000
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
0.4
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
0.3
I
D
= 43 A
0.2
10 A
21.5 A
Reverse Recovery Time trr (ns)
0.5
100
0.1
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
1000
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0215EJ0200 Rev2.00
Dec 03, 2010
Page 3 of 6
RJK4018DPK
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 43 A
Ta = 25
°C
V
GS
600
1000
V
DD
= 320 V
200 V
100 V
12
Coss
100
Crss
Ta = 25°C
100
200
400 V
DS
8
200
10
0
V
GS
= 0
f = 1 MHz
V
DD
= 320 V
200 V
100 V
40
80
120
160
4
0
200
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
100
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
8
7
6
I
D
= 10 mA
5
4
3
2
1
0
-25
0
25
50
75
100 125 150
1 mA
0.1 mA
V
DS
= 10 V
80
60
40
20
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0215EJ0200 Rev2.00
Dec 03, 2010
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK4018DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
Preliminary
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.625°C/W, Tc = 25°C
P
DM
u
tp
lse
0.05
0.03
0.02
1
0.0
1s
D=
PW
T
PW
T
ho
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0215EJ0200 Rev2.00
Dec 03, 2010
Page 5 of 6
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
