电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CA3046M96

产品描述RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN
产品类别分立半导体    晶体管   
文件大小39KB,共5页
制造商Harris
官网地址http://www.harris.com/
下载文档 详细参数 选型对比 全文预览

CA3046M96概述

RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN

CA3046M96规格参数

参数名称属性值
厂商名称Harris
包装说明SMALL OUTLINE, R-PDSO-G14
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压15 V
配置COMPLEX
最小直流电流增益 (hFE)40
最高频带VERY HIGH FREQUENCY BAND
JEDEC-95代码MS-012AB
JESD-30 代码R-PDSO-G14
元件数量5
端子数量14
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)550 MHz

CA3046M96文档预览

CA3045, CA3046
Semiconductor
September 1998
File Number 341.4
General Purpose NPN
Transistor Arrays
The CA3045 and CA3046 each consist of five general
purpose silicon NPN transistors on a common monolithic
substrate. Two of the transistors are internally connected to
form a differentially connected pair.
The transistors of the CA3045 and CA3046 are well suited to
a wide variety of applications in low power systems in the DC
through VHF range. They may be used as discrete
transistors in conventional circuits. However, in addition, they
provide the very significant inherent integrated circuit
advantages of close electrical and thermal matching.
Features
• Two Matched Transistors
- V
BE
Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±5mV
- I
IO
Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• 5 General Purpose Monolithic Transistors
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
Applications
• Three Isolated Transistors and One Differentially
Connected Transistor Pair for Low Power Applications at
Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018
Integrated-Circuit Transistor Array” for Suggested
Applications
Ordering Information
PART NUMBER
(BRAND)
CA3045F
CA3046
CA3046M
(3046)
CA3046M96
(3046)
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
PACKAGE
14 Ld CERDIP
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC Tape
and Reel
PKG.
NO.
F14.3
E14.3
M14.15
M14.15
Pinout
CA3045, (CERDIP)
CA3046 (PDIP, SOIC)
TOP VIEW
1
2
DIFFERENTIAL
PAIR
3
4
5
6
7
Q
3
Q
2
Q
1
Q
5
14
13 SUBSTRATE
12
11
Q
4
10
9
8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright
©
Harris Corporation 1998
CA3045, CA3046
Absolute Maximum Ratings
Collector-to-Emitter Voltage (V
CEO
) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (V
CBO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (V
CIO
, Note 1) . . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (V
EBO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
CERDIP Package. . . . . . . . . . . . . . . . .
150
75
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
DC CHARACTERISTICS
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current (Figure 1)
Collector Cutoff Current (Figure 2)
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
V
(BR)CBO
V
(BR)CEO
V
(BR)CIO
V
(BR)EBO
I
CBO
I
CEO
h
FE
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10µA, I
CI
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 3V
I
C
= 10mA
I
C
= 1mA
I
C
= 10µA
V
CE
= 3V, I
C
= 1mA
20
15
20
5
-
-
-
40
-
-
-
-
-
-
60
24
60
7
0.002
See Fig. 2
100
100
54
0.3
0.715
0.800
0.45
0.45
-
-
-
-
40
0.5
-
-
-
2
-
-
5
5
V
V
V
V
nA
µA
-
-
-
µA
V
V
mV
mV
Input Offset Current for Matched Pair Q
1
and Q
2
.
|I
IO1
- I
IO2
| (Note 3) (Figure 4)
Base-to-Emitter Voltage (Note 3) (Figure 5)
V
BE
V
CE
= 3V
I
E
= 1mA
I
E
= 10mA
Magnitude of Input Offet Voltage for Differential Pair
|V
BE1
- V
BE2
| (Note 3) (Figures 5, 7)
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
- V
BE4
|, |V
BE4
- V
BE5
|,
|V
BE5
- V
BE3
| (Note 3) (Figures 5, 7)
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
Collector-to-Emitter Saturation Voltage
Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio (Figure 11)
Short Circuit Input Impedance (Figure 11)
NF
∆V
BE
--------------
-
∆T
V
CES
∆V
IO
----------------
∆T
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
-
-1.9
-
mV/
o
C
I
B
= 1mA, I
C
= 10mA
V
CE
= 3V, I
C
= 1mA
-
-
0.23
1.1
-
-
V
µV/
o
C
f = 1kHz, V
CE
= 3V, I
C
= 100µA,
Source Resistance = 1kΩ
-
3.25
-
dB
h
FE
h
IE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
-
110
3.5
-
-
-
kΩ
2
CA3045, CA3046
Electrical Specifications
PARAMETER
Open Circuit Output Impedance (Figure 11)
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
Admittance Characteristics
Forward Transfer Admittance (Figure 12)
Input Admittance (Figure 13)
Output Admittance (Figure 14)
Reverse Transfer Admittance (Figure 15)
Gain Bandwidth Product (Figure 16)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
NOTE:
3. Actual forcing current is via the emitter for this test.
Y
FE
Y
IE
Y
OE
Y
RE
f
T
C
EB
C
CB
C
CI
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
CS
= 3V, I
C
= 0
-
-
-
-
300
-
-
-
31 - j1.5
0.3 + j0.04
0.001 + j0.03
See Fig. 14
550
0.6
0.58
2.8
-
-
-
-
-
-
-
-
-
-
-
-
MHz
pF
pF
pF
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
(Continued)
SYMBOL
h
OE
h
RE
TEST CONDITIONS
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
MIN
-
-
TYP
15.6
1.8 x 10
-4
MAX
-
-
UNITS
µS
-
Typical Performance Curves
10
2
COLLECTOR CUTOFF CURRENT (nA)
10
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
COLLECTOR CUTOFF CURRENT (nA)
I
E
= 0
10
3
10
2
10
1
10
-1
10
-2
10
-3
0
25
50
75
TEMPERATURE (
o
C)
100
125
0
25
50
75
TEMPERATURE (
o
C)
100
125
V
CE
= 10V
I
B
= 0
1
10
-1
10
-2
10
-3
10
-4
V
CE
= 5V
FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT
vs TEMPERATURE FOR EACH TRANSISTOR
120
V
CE
= 3V
STATIC FORWARD CURRENT
TRANSFER RATIO (h
FE
)
110
100
90
h FE1
80
70
60
50
0.01
0.8
h
FE2
FE2
-------------
OR
-------------
h FE1
h
0.9
T
A
= 25
o
C
h
FE
1.0
BETA RATIO
1.1
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
10
INPUT OFFSET CURRENT (µA)
V
CE
= 3V
T
A
= 25
o
C
1.0
0.1
0.1
1.0
10
0.01
0.01
EMITTER CURRENT (mA)
0.1
1.0
COLLECTOR CURRENT (mA)
10
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q
1
AND Q
2
vs
EMITTER CURRENT
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q
1
Q
2
vs
COLLECTOR CURRENT
3
CA3045, CA3046
Typical Performance Curves
0.8
BASE-TO-EMITTER VOLTAGE (V)
V
CE
= 3V
T
A
= 25
o
C
V
BE
3
INPUT OFFSET VOLTAGE (mV)
BASE-TO-EMITTER VOLTAGE (V)
(Continued)
V
CE
= 3V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-75
I
E
= 3mA
I
E
= 1mA
I
E
= 0.5mA
0.7
0.6
2
0.5
INPUT OFFSET VOLTAGE
1
0.4
0.01
0
0.1
1.0
10
EMITTER CURRENT (mA)
-50
-25
0
25
50
75
TEMPERATURE (
o
C)
100
125
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTICS AND INPUT OFFSET VOLTAGE
FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED
TRANSISTORS vs EMITTER CURRENT
V
CE
= 3V
4.00
INPUT OFFSET VOLTAGE (mV)
I
E
= 10mA
3.00
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH
TRANSISTOR
20
V
CE
= 3V
R
S
= 500Ω
T
A
= 25
o
C
f = 0.1kHz
2.00
0.75
0.50
0.25
0
-75
-50
-25
0
25
50
75
TEMPERATURE (
o
C)
100
125
I
E
= 1mA
I
E
= 0.1mA
NOISE FIGURE (dB)
15
f = 1kHz
10
f = 10kHz
5
0
0.01
0.1
COLLECTOR CURRENT (mA)
1.0
FIGURE7. TYPICALINPUTOFFSETVOLTAGECHARACTERISTICS
FOR DIFFERENTIAL PAIR AND PAIRED
ISOLATED TRANSISTORS vs TEMPERATURE
V
CE
= 3V
R
S
= 1000Ω
T
A
= 25
o
C
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
30
V
CE
= 3V
R
S
= 10000Ω
T
A
= 25
o
C
f = 0.1kHz
f = 1kHz
f = 10kHz
20
25
NOISE FIGURE (dB)
1
20
NOISE FIGURE (dB)
15
f = 0.1kHz
f = 1kHz
10
f = 10kHz
5
15
10
5
0
0.01
0.1
COLLECTOR CURRENT (mA)
0
0.01
0.1
COLLECTOR CURRENT (mA)
1
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
4
CA3045, CA3046
Typical Performance Curves
100
V
CE
= 3V
f = 1kHz
T
A
= 25
o
C
h
IE
10
h
RE
(Continued)
FORWARD TRANSFER CONDUCTANCE (g
FE
)
OR SUSCEPTANCE (b
FE
) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
40
30
20
10
0
-10
-20
0.1
1
10
FREQUENCY (MHz)
100
b
FE
g
FE
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
NORMALIZED h PARAMETERS
h
FE
= 110
h
IE
= 3.5kΩ
h
RE
= 1.88 x 10
-4
h
OE
= 15.6µS
h
OE
AT
1mA
1.0
h
FE
h
RE
0.1
0.01
h
IE
0.1
1.0
COLLECTOR CURRENT (mA)
10
FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT
TRANSFER RATIO, SHORT CIRCUIT INPUT
IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE,
AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER
RATIO vs COLLECTOR CURRENT
6
5
4
3
b
IE
2
1
0
0.1
1
10
FREQUENCY (MHz)
100
FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs
FREQUENCY
OUTPUT CONDUCTANCE (g
OE
)
OR SUSCEPTANCE (b
OE
) (mS)
INPUT CONDUCTANCE (g
IE
)
OR SUSCEPTANCE (b
IE
) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
6
5
4
3
2
1
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
b
OE
g
IE
g
OE
0
0.1
1
10
FREQUENCY (MHz)
100
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY
REVERSE TRANSFER CONDUCTANCE (g
RE
)
OR SUSCEPTANCE (b
RE
) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
g
RE
IS SMALL AT FREQUENCIES
LESS THAN 500MHz
FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
V
CE
= 3V
T
A
= 25
o
C
GAIN BANDWIDTH PRODUCT (MHz)
1000
900
800
700
600
500
400
300
200
100
0
0
-0.5
-1.0
b
RE
-1.5
-2.0
1
10
FREQUENCY (MHz)
100
1
2
3
4 5 6 7 8 9 10 11
COLLECTOR CURRENT (mA)
12 13 14
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs
FREQUENCY
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
5

CA3046M96相似产品对比

CA3046M96 CA3046M CA3045F
描述 RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MO-001AB
厂商名称 Harris Harris Harris
包装说明 SMALL OUTLINE, R-PDSO-G14 SMALL OUTLINE, R-PDSO-G14 IN-LINE, R-GDIP-T14
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A
集电极-发射极最大电压 15 V 15 V 15 V
配置 COMPLEX COMPLEX COMPLEX
最小直流电流增益 (hFE) 40 40 40
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95代码 MS-012AB MS-012AB MO-001AB
JESD-30 代码 R-PDSO-G14 R-PDSO-G14 R-GDIP-T14
元件数量 5 5 5
端子数量 14 14 14
最高工作温度 150 °C 150 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE IN-LINE
极性/信道类型 NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES NO
端子形式 GULL WING GULL WING THROUGH-HOLE
端子位置 DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 550 MHz 550 MHz 550 MHz
是否Rohs认证 - 不符合 不符合
JESD-609代码 - e0 e0
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1763  2550  421  218  925  15  21  19  2  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved