RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
参数名称 | 属性值 |
厂商名称 | MACOM |
包装说明 | UNCASED CHIP, R-XUUC-N7 |
Reach Compliance Code | compliant |
其他特性 | LOW NOISE |
配置 | SINGLE |
最小漏源击穿电压 | 8 V |
FET 技术 | METAL SEMICONDUCTOR |
最大反馈电容 (Crss) | 0.023 pF |
最高频带 | K BAND |
JESD-30 代码 | R-XUUC-N7 |
元件数量 | 1 |
端子数量 | 7 |
工作模式 | DEPLETION MODE |
封装主体材料 | UNSPECIFIED |
封装形状 | RECTANGULAR |
封装形式 | UNCASED CHIP |
极性/信道类型 | N-CHANNEL |
最小功率增益 (Gp) | 7.5 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | NO LEAD |
端子位置 | UPPER |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE |
CF001-01 | CF001-03 | CF010-01 | CF004-03 | CF003-01 | CF003-02 | |
---|---|---|---|---|---|---|
描述 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-13 | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-7 | Transistor, |
包装说明 | UNCASED CHIP, R-XUUC-N7 | UNCASED CHIP, R-XUUC-N7 | UNCASED CHIP, R-XUUC-N13 | UNCASED CHIP, R-XUUC-N4 | UNCASED CHIP, R-XUUC-N7 | , |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
厂商名称 | MACOM | - | MACOM | MACOM | MACOM | MACOM |
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