TO
-2
20F
BTA208X-800B
3Q Hi-Com Triac
Rev. 03 — 3 February 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series B" triac will commutate the full rated RMS current at the maximum
rated junction temperature without the aid of a snubber.
1.2 Features and benefits
3Q technology for improved noise
immunity
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Isolated mounting base package
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Electronic thermostats
General purpose motor controls
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive
peak on-state
current
RMS on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
h
≤
73 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Conditions
Min
-
-
Typ
-
-
Max Unit
800
65
V
A
I
T(RMS)
-
-
8
A
Static characteristics
I
GT
gate trigger
current
2
2
2
18
21
34
50
50
50
mA
mA
mA
NXP Semiconductors
BTA208X-800B
3Q Hi-Com Triac
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA208X-800B
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤
73 °C; see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t
p
= 10 ms; sine-wave pulse
I
T
= 0.2 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-40
-
Max
800
8
65
71
21
100
2
5
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA208X-800B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
2 of 13
NXP Semiconductors
BTA208X-800B
3Q Hi-Com Triac
10
I
T(RMS)
(A)
8
73
°C
003aaa969
25
I
T(RMS)
(A)
20
003aaa970
6
15
4
10
2
5
0
−50
0
0
50
100
T
h
(°C)
150
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
12
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
003aaa967
P
tot
(W)
10
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
71
T
h(max)
(°C)
80
8
89
6
98
4
107
2
116
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA208X-800B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
3 of 13
NXP Semiconductors
BTA208X-800B
3Q Hi-Com Triac
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab121
10
3
I
T
I
TSM
(A)
(1)
10
2
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
−2
10
−1
1
10
t
p
(ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208X-800B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
4 of 13
NXP Semiconductors
BTA208X-800B
3Q Hi-Com Triac
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
Conditions
full cycle or half cycle; with heatsink
compound; see
Figure 6
full cycle or half cycle; without heatsink
compound; see
Figure 6
R
th(j-a)
thermal resistance from
junction to ambient
in free air
Min
-
-
-
Typ
-
-
55
Max
4.5
6.5
-
Unit
K/W
K/W
K/W
10
Z
th(j-h)
(K/W)
1
(1)
(2)
003aaf915
(3)
(4)
10
−1
P
10
−2
t
t
p
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig 6.
Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free ; 50 Hz
≤
f
≤
60 Hz; RH
≤
65 %;
T
h
= 25 °C
from main terminal 2 to external
heatsink ; f = 1 MHz; T
h
= 25 °C
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BTA208X-800B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
5 of 13
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