Si9806DY
Vishay Siliconix
Dual Gate, N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Gate 1
25
Gate 2
0.400 @ V
GS
= 4.5 V
0.570 @ V
GS
= 3.0 V
"1.8
"1.5
r
DS(on)
(W)
0.027 @ V
GS
= 4.5 V
0.038 @ V
GS
= 3.0 V
I
D
(A)
"7.0
"6.0
D
SO-8
S
G
2
S
G
1
1
2
3
4
Top View
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Gate 1
25
"12
"7.0
"5.7
"40
2.1
2.5
Gate 2
Unit
V
"1.8
"1.5
"4.0
A
W
1.0
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70771
S-00652—Rev. C, 27-Mar-00
www.siliconix.com
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FaxBack 408-970-5600
Symbol
R
thJA
Gate 1 or Gate 2
50
Unit
_C/W
1
Si9806DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS1( )
DS1(on)
Drain-Source On State R i
Drain Source On-State Resistance
a
D i S
O S
r
DS2(on)
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
G1S
= 0 V, V
G2S
= 4.5 V, I
D
= 1.8 A
V
G1S
= 0 V, V
G2S
= 3.0 V, I
D
= 0.3 A
V
DS
= 10 V, I
D
= 7.0 A
I
S
= 2.1 A, V
GS
= 0 V
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55_C
(G
1
= G
2
) V
DS
= 5 V, V
GS
= 4.5 V
(G
1
= G
2
) V
GS
= 4.5 V, I
D
= 7.0 A
(G
1
= G
2
) V
GS
= 3.0 V, I
D
= 6.0 A
40
0.021
0.028
0.265
0.340
25
0.71
1.1
0.027
0.038
0.400
0.570
S
V
W
0.6
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Q
g
Gate 1
V
DS
= 10 V, V
GS(1, 2)
= 4.5 V
I
D
= 7.0 A
70
Gate 2
V
DS
= 10 V, V
GS(1)
= 0 V, V
GS(2)
= 4.5
V,
V I
D
= 1.8 A
18
Gate 1
Gate 2
Gate 1
Gate 2
Gate 1
Gate 2
14
1.2
4.2
C
nC
0.3
2.4
0.3
23
V
DD
= 10 V, R
L
= 10
W
V,
I
D
^
1 A, V
GEN
= 4 5 V R
G
= 6
W
A
4.5 V,
30
46
18
I
F
= 2.1 A, di/dt = 100 A/ms
60
40
60
90
30
120
ns
20
2.5
Gate-Source Charge
Q
gs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70771
S-00652—Rev. C, 27-Mar-00
Si9806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 5 thru 3 V
32
I
D
– Drain Current (A)
I
D
– Drain Current (A)
32
40
Transfer Characteristics
24
2.5 V
16
24
16
T
C
= 125_C
8
25_C
–55_C
8
2V
0
0
2
4
6
8
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.07
0.06
r
DS(on)
– On-Resistance (
W
)
C – Capacitance (pF)
0.05
0.04
V
GS
= 3 V
0.03
0.02
0.01
0
0
8
16
24
32
40
V
GS
= 4.5 V
3000
Capacitance
2500
C
iss
2000
1500
C
oss
1000
500
C
rss
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
4.5
V
DS
= 10 V
I
D
= 7 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 7 A
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance (
W
)
(Normalized)
6
9
12
15
3.6
1.6
2.7
1.2
1.8
0.8
0.9
0
0
3
0.4
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70771
S-00652—Rev. C, 27-Mar-00
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FaxBack 408-970-5600
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Si9806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
0.08
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
0.06
10
T
J
= 150_C
0.04
T
J
= 25_C
0.02
I
D
= 7 A
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
100
Single Pulse Power
0.2
I
D
= 250
mA
V
GS(th)
Variance (V)
–0.0
Power (W)
80
60
–0.2
40
–0.4
20
–0.6
–0.8
–50
0
0
50
T
J
– Temperature (_C)
100
150
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70771
S-00652—Rev. C, 27-Mar-00
4
Si9806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
5
V
GS
= 5 thru 3.5 V
r
DS(on)
– On-Resistance ( W )
4
I
D
– Drain Current (A)
0.8
1.0
On-Resistance vs. Drain Current
3
3V
0.6
V
GS
= 3 V
0.4
V
GS
= 4.5 V
0.2
2
2.5 V
1
2V
0
0
2
4
6
8
10
0
0
0.8
1.6
2.4
3.2
4.0
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
4.5
Gate Charge
1.0
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 1.8 A
2.7
r
DS(on)
– On-Resistance ( W )
3.6
0.8
0.6
I
D
= 1.8 A
0.4
1.8
0.9
0.2
0
0
0.3
0.6
0.9
1.2
0
0
2
4
6
8
Q
g
– Total Gate Charge (nC)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 70771
S-00652—Rev. C, 27-Mar-00
www.siliconix.com
S
FaxBack 408-970-5600
5
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