SUD70N03-06P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
70
70
r
DS(on)
(W)
0.006 @ V
GS
= 10 V
0.009 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
High Current
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
−
Optimized For Low Side
D
Synchronous Rectifiers
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD70N03-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current, single pulse
Avalanche Energy, single pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
70
70
b
100
27
45
101
88
8.3
a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package.
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
C/W
1
SUD70N03-06P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0072
50
0.0046
0.006
0.0105
0.009
S
W
30
1.0
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Charge
c
Gate-Source
Gate-Drain
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
f = 1 MHz
0.9
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3100
565
255
21
10
7.5
2.0
12
12
30
10
3.4
20
20
45
15
ns
W
30
nC
p
pF
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 6 V
160
I D
−
Drain Current (A)
5V
I D
−
Drain Current (A)
80
100
Transfer Characteristics
120
60
80
4V
40
T
C
= 125_C
20
25_C
−55_C
0
40
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
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0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
2
SUD70N03-06P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
100
G
FS
−
Transconductance (S)
80
60
40
20
0
0
10
20
30
40
50
125_C
T
C
=
−55_C
25_C
R
DS(on)
−
On-Resistance (W)
0.012
0.015
Vishay Siliconix
On-Resistance vs. Drain Current
0.009
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.003
0.000
0
20
40
60
80
100
I
D
−
Drain Current (A)
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
C
rss
C
oss
I
D
−
Drain Current (A)
10
V
DS
= 15 V
I
D
= 50 A
Capacitance
C
iss
V GS
−
Gate-to-Source Voltage (V)
Gate Charge
8
C
−
Capacitance (pF)
6
4
2
0
0
10
20
30
40
50
Q
g
−
Total Gate Charge (nC)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resiistance
(Normalized)
1.5
T
J
= 150_C
10
1.0
T
J
= 25_C
0.5
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
www.vishay.com
3
SUD70N03-06P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Ambient Temperature
30
25
100
I D
−
Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
I D
−
Drain Current (A)
New Product
1000
Limited
by r
DS(on)
Safe Operating Area
10, 100
ms
10
1 ms
10 ms
100 ms
1s
10 s
T
A
= 25_C
Single Pulse
100 s
dc
1
0.1
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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4
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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