SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
TO-220AB
TO-220 FULLPAK
FEATURES
560 V
V
GS
= 10 V
48
12
15
Single
D
• Low Figure-of-Merit R
on
x Q
g
0.555
• 100 % Avalanche Tested
• Gate Charge Improved
• T
rr
/Q
rr
Improved
• Compliant to RoHS Directive 2002/95/EC
G
D
S
G
D
S
D
2
PAK (TO-263)
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP12N50C-E3
D
2
PAK (TO-263)
SiHB12N50C-E3
TO-220 FULLPAK
SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
LIMIT
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
c
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
E
AS
P
D
T
J
, T
stg
208
- 55 to + 150
300
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
TO220-AB
SYMBOL D
2
PAK (TO-263)
V
DS
V
GS
I
D
I
DM
1.67
180
36
500
± 30
12
7.5
28
0.28
W/°C
mJ
W
°C
A
TO-220
FULLPAK
UNIT
V
Notes
a. Limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
Ω,
I
AS
= 12 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
1
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)
a
SYMBOL
R
thJA
R
thJC
R
thJA
TO220-AB D
2
PAK (TO-263)
62
0.6
40
TO-220 FULLPAK
65
3.5
-
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
T
J
= 25 °C, I
F
= I
S
, dI/dt = 100 A/μs,
V
R
= 20 V
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 4 A
V
DS
= 50 V, I
D
= 3 A
500
-
3.0
-
-
-
-
-
-
0.6
-
-
-
-
0.46
3
-
-
5.0
± 100
50
250
0.555
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
-
-
-
-
1375
165
17
32
12
15
18
35
23
6
1.1
-
-
-
48
-
-
-
-
-
-
-
Ω
ns
nC
pF
V
GS
= 10 V
I
D
= 10 A, V
DS
= 400 V
-
-
-
V
DD
= 250 V, I
D
= 10 A
R
g
= 4.3
Ω,
V
GS
= 10 V
-
-
-
f = 1 MHz, open drain
-
-
-
-
-
-
-
-
-
-
580
4.3
13
12
A
28
1.8
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 10 A, V
GS
= 0 V
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
www.vishay.com
2
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
35
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
T
J
= 25 °C
25
20
15
10
5
0
0
30
25
20
15
10
5
0
T
J
= 25 °C
T
J
= 150 °C
7.0 V
5
10
15
20
25
30
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
V
GS
, Gate-to-Source Voltage (V)
Fig.
3
- Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
18
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
3
I
D
= 12 A
2.5
2
1.5
1
0.5
V
GS
= 10 V
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
I
D
, Drain-to-Source Current (A)
T
J
= 150 °C
15
12
9
6
3
0
0
7.0 V
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
3
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
2400
100
I
SD
, Reverse Drain Current (A)
2000
C, Capacitance (pF)
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+C
gd
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
T
J
= 150 °C
T
J
= 25 °C
1600
1200
800
C
oss
400
C
rss
0
1
10
100
1000
10
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
100
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
4
0
0
10
20
30
I
D
, Drain-to-Source Current (A)
I
D
= 12 A
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
10
100 µs
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
0.1
10
100
1 ms
10 ms
40
50
60
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
2
PAK)
100
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
I
D
, Drain-to-Source Current (A)
10
100 µs
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
0.1
10
100
1 ms
10 ms
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
www.vishay.com
4
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
V
DS
V
GS
R
G
R
D
V
DS
90 %
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1
0.5
Thermal Response (Z
thJC
)
0.1
0.05
0.1
0.02
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-3
10
-2
0.1
1
0.001
10
-4
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D
2
PAK)
1
0.5
Thermal Response (Z
thJC
)
0.2
0.1
0.1
0.05
0.02
Single Pulse
(Thermal Response)
0.001
10
-4
10
-3
10
-2
0.1
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
1
10
t
1
, Rectangular Pulse Duration (s)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
5
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
