Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, MO-163, BGA-153
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Microsemi |
零件包装代码 | BGA |
包装说明 | BGA, |
针数 | 153 |
Reach Compliance Code | compliant |
其他特性 | 128K X 32 SRAM ALSO AVAILABLE |
JESD-30 代码 | R-PBGA-B153 |
长度 | 22 mm |
内存密度 | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT |
内存宽度 | 32 |
功能数量 | 1 |
端子数量 | 153 |
字数 | 1048576 words |
字数代码 | 1000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 1MX32 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
座面最大高度 | 3.5 mm |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3.135 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | BALL |
端子节距 | 1.27 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 14 mm |
EDI9LC644V1512BC | EDI9LC644V1510BC | EDI9LC644V1312BC | EDI9LC644V1610BC | EDI9LC644V2010BC | EDI9LC644V2012BC | EDI9LC644V1310BC | EDI9LC644V1612BC | |
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描述 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, MO-163, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, MO-163, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, MO-163, BGA-153 | Memory Circuit, 1MX32, CMOS, PBGA153, 14 X 22 MM, MO-163, BGA-153 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, |
针数 | 153 | 153 | 153 | 153 | 153 | 153 | 153 | 153 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
其他特性 | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE | 128K X 32 SRAM ALSO AVAILABLE |
JESD-30 代码 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 | R-PBGA-B153 |
长度 | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm |
内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 153 | 153 | 153 | 153 | 153 | 153 | 153 | 153 |
字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.5 mm | 3.5 mm | 3.5 mm | 3.5 mm | 3.5 mm | 3.5 mm | 3.5 mm | 3.5 mm |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
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