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MT28F322D18FH-10TET: 产品描述Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58; 产品类别存储存储; 文件大小675KB，共48页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/

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MT28F322D18FH-10TET概述

Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58

MT28F322D18FH-10TET规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Micron Technology
零件包装代码	BGA
包装说明	FBGA-58
针数	58
Reach Compliance Code	unknown
最长访问时间	100 ns
启动块	TOP
命令用户界面	YES
通用闪存接口	YES
数据轮询	NO
JESD-30 代码	R-PBGA-B58
JESD-609代码	e0
长度	12 mm
内存密度	33554432 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
功能数量	1
部门数/规模	8,63
端子数量	58
字数	2097152 words
字数代码	2000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	2MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA58,8X13,30
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小	4 words
并行/串行	PARALLEL
电源	1.8 V
认证状态	Not Qualified
座面最大高度	1.2 mm
部门规模	8K,64K
最大待机电流	0.000001 A
最大压摆率	0.08 mA
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.65 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
切换位	NO
类型	NOR TYPE
宽度	7 mm

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2 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

FLASH MEMORY

MT28F322D20

MT28F322D18

Low Voltage, Extended Temperature

0.22µm Process Technology

FEATURES

• Flexible dual-bank architecture

– Support for true concurrent operation with zero

latency

– Read bank

during program bank

and vice versa

– Read bank

during erase bank

and vice versa

• Basic configuration:

Seventy-one erasable blocks

– Bank

(8Mb for data storage)

– Bank

(24Mb for program storage)

• V

, V

Q, V

voltages*

– 1.65V (MIN), 1.95V (MAX) V

, V

(MT28F322D18 only)

– 1.80V (MIN), 2.20V (MAX) V

, V

(MT28F322D20 only)

– 0.9V (TYP) V

(in-system PROGRAM/ERASE)

– 12V ±5% (HV) V

tolerant (factory programming

compatibility)

• Random access time: 95ns @ 1.80V V

• Burst Mode read access

– MAX clock rate: 40 MHz (

CLK = 25ns)

– Burst latency: 100ns @ 1.80V V

and 40 MHz

–

ACLK: 24ns @ 1.80V V

and 40 MHz

• Page Mode read access*

– Eight-word page

– Interpage read access: 95ns @ 1.80V

– Intrapage read access: 35ns @ 1.80V

• Low power consumption (V

= 1.95V)

– READ < 15mA (MAX)

– Standby < 50µA

– Automatic power saving feature (APS)

• Enhanced write and erase suspend options

– ERASE-SUSPEND-to-READ within same bank

– PROGRAM-SUSPEND-to-READ within same bank

– ERASE-SUSPEND-to-PROGRAM within same bank

• Dual 64-bit chip protection registers for security

purposes

• Cross-compatible command support

– Extended command set

– Common flash interface

• PROGRAM/ERASE cycle

– 100,000 WRITE/ERASE cycles per block

*Data based on MT28F322D20 device.

BALL ASSIGNMENT

58-Ball FBGA

A11

A18

A12

A20

CLK

RST#

A17

A13

A10

ADV#

WE#

A19

A15

A14

WAIT#

A16

DQ12

WP#

DQ15

DQ6

DQ4

DQ2

DQ1

CE#

DQ14

DQ13

DQ11

DQ10

DQ9

DQ0

OE#

DQ7

DQ5

DQ3

DQ8

Top View

(Ball Down)

NOTE:

See page 7 for Ball Description Table.

See page 47 for mechanical drawing.

OPTIONS

• Timing

95ns access

100ns access

110ns access

• Frequency

40 MHz

30 MHz

No burst operation

• Boot Block Starting Address

Top (FFFFFh)

Bottom (00000h)

• Package

58-ball FBGA (8 x 7 ball grid)

• Operating Temperature Range

Extended (-40ºC to +85ºC)

Part Number Example:

MARKING

-95

-10

-11

None

MT28F322D20FH-954

2 Meg x 16 Async/Page/Burst Flash Memory

MT28F322D18FH_6.p65 – Rev. 6, Pub. 6/01

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT28F322D18FH-10TET相似产品对比

	MT28F322D18FH-10TET	MT28F322D20FH-954BET	MT28F322D20FH-954TET	MT28F322D18FH-103TET	MT28F322D18FH-11BET	MT28F322D18FH-103BET	MT28F322D18FH-10BET	MT28F322D18FH-11TET	MT28F322D20FH-10BET
描述	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58	Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	FBGA-58	TFBGA,	TFBGA,	FBGA-58	FBGA-58	FBGA-58	FBGA-58	FBGA-58	TFBGA,
针数	58	58	58	58	58	58	58	58	58
Reach Compliance Code	unknown	unknow	unknow	not_compliant	unknown	not_compliant	not_compliant	not_compliant	unknown
JESD-30 代码	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58	R-PBGA-B58
JESD-609代码	e0	e1	e1	e0	e0	e0	e0	e0	e1
长度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
内存密度	33554432 bit	33554432 bi	33554432 bi	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1
端子数量	58	58	58	58	58	58	58	58	58
字数	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
字数代码	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	1.95 V	2.2 V	2.2 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	2.2 V
最小供电电压 (Vsup)	1.65 V	1.8 V	1.8 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.8 V
标称供电电压 (Vsup)	1.8 V	2 V	2 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	2 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	TIN SILVER COPPER	TIN SILVER COPPER	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN SILVER COPPER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm
是否Rohs认证	不符合	-	-	不符合	不符合	不符合	不符合	不符合	-
厂商名称	Micron Technology	Micron Technology	Micron Technology	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
最长访问时间	100 ns	-	-	100 ns	110 ns	100 ns	100 ns	110 ns	-
启动块	TOP	-	-	TOP	BOTTOM	BOTTOM	BOTTOM	TOP	-
命令用户界面	YES	-	-	YES	YES	YES	YES	YES	-
通用闪存接口	YES	-	-	YES	YES	YES	YES	YES	-
数据轮询	NO	-	-	NO	NO	NO	NO	NO	-
部门数/规模	8,63	-	-	8,63	8,63	8,63	8,63	8,63	-
封装等效代码	BGA58,8X13,30	-	-	BGA58,8X13,30	BGA58,8X13,30	BGA58,8X13,30	BGA58,8X13,30	BGA58,8X13,30	-
页面大小	4 words	-	-	4 words	4 words	4 words	4 words	4 words	-
并行/串行	PARALLEL	-	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
电源	1.8 V	-	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-
部门规模	8K,64K	-	-	8K,64K	8K,64K	8K,64K	8K,64K	8K,64K	-
最大待机电流	0.000001 A	-	-	0.000001 A	0.000001 A	0.000001 A	0.000001 A	0.000001 A	-
最大压摆率	0.08 mA	-	-	0.08 mA	0.08 mA	0.08 mA	0.08 mA	0.08 mA	-
切换位	NO	-	-	NO	NO	NO	NO	NO	-
类型	NOR TYPE	-	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	-

MT28F322D18FH-10TET

MT28F322D18FH-10TET概述

MT28F322D18FH-10TET规格参数

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MT28F322D18FH-10TET相似产品对比

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