DISCRETE SEMICONDUCTORS
DATA SHEET
BFS25A
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
December 1997
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
Low current consumption
•
Low noise figure
•
Gold metallization ensures
excellent reliability
•
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
up to T
s
= 170
°C;
note 1
I
C
= 0.5 mA; V
CE
= 1 V; T
j
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°C
I
c
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°C
I
c
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°C
open base
CONDITIONS
open emitter
MIN.
−
−
−
−
50
3.5
−
−
TYP.
−
−
−
−
80
5
13
1.8
1
Top view
BFS25A
PINNING
PIN
1
2
3
DESCRIPTION
Code: N6
base
emitter
collector
handbook, 2 columns
3
2
MBC870
Fig.1 SOT323.
MAX.
8
5
6.5
32
200
−
−
−
UNIT
V
V
mA
mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 170
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
8
5
2
6.5
32
150
175
UNIT
V
V
V
mA
mW
°C
°C
December 1997
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C,
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
re
f
T
G
UM
F
PARAMETER
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CB
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 1 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°C
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFS25A
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 170
°C;
note 1
THERMAL RESISTANCE
190 K/W
MIN.
−
50
−
3.5
−
−
−
TYP.
−
80
0.3
5
13
1.8
2
MAX.
50
200
0.45
−
−
−
−
UNIT
nA
pF
GHz
dB
dB
dB
December 1997
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
MRC038 - 1
MRC037
handbook,
40
halfpage
handbook, halfpage
100
P tot
(mW)
30
h FE
80
60
20
40
10
20
0
0
50
100
150
Ts (oC)
200
0
10
−3
10
−2
10
−1
1
I C (mA)
10
V
CE
= 1 V; T
j
= 25
°C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
0.5
MRC031
MRC032
C re
(pF)
handbook, halfpage
10
0.4
fT
(GHz)
8
VCE = 3 V
1V
0.3
6
0.2
4
0.1
2
0
0
1
2
3
4
5
VCB (V)
0
0
0.5
1
1.5
2
2.5
I C (mA)
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
December 1997
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
In Figs 6 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
handbook, halfpage
BFS25A
20
MRC036
G UM
25
handbook, halfpage
gain
(dB)
20
G UM
MRC035
(dB)
16
VCE = 3 V
1V
12
15
MSG
10
8
4
5
0
0
0.5
1
1.5
2
2.5
I C (mA)
0
0
0.5
1
1.5
2
2.5
I C (mA)
f = 1 GHz; T
amb
= 25
°C.
V
CE
= 1 V; f = 500 MHz; T
amb
= 25
°C.
Fig.6 Gain as a function of collector current.
Fig.7
Maximum unilateral power gain as a
function of collector current.
handbook, halfpage
50
MRC034
gain
(dB)
40
G UM
30
50
handbook, halfpage
gain
(dB)
40
G UM
MRC033
30
20
MSG
20
MSG
10
G max
0
0.01
0.1
1
f (GHz)
10
10
G max
0
10
−2
10
−1
1
10
f (GHz)
I
C
= 0.5 mA; V
CE
= 1 V; T
amb
= 25
°C.
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
°C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
December 1997
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
