SB2060LFCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
60 Volts
CURRENT
20 Amperes
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
MECHANICAL DATA
Case : ITO-220AB, Plastic
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.606(15.4)
0.583(14.8)
Weight: 0.055 ounces, 1.5615 grams
0.543(13.8)
0.512(13.0)
Terminals : Solderable per MIL-STD-750, Method 2026
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.4)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Typ i c a l the r ma l r e s i s ta nc e
Operating junction
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJC
T
J
T
STG
VALUE
60
20
10
145
4 .5
-55 to + 125
-55 to + 150
O
UNIT
V
A
A
C / W
o
C
o
C
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=5A
I
F
=10A
I
F
=5A
I
F
=10A
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
MIN.
64
-
-
-
-
-
-
TYP.
68
0.44
0.51
-
-
-
-
MAX.
-
0.51
0.60
0.44
0.56
0.5
20
UNIT
V
V
V
mA
Instantaneous forward voltage per
diode
(1)
V
F
Reverse current per diode
(2)
I
R
Note.1.Pulse test : 380μs pulse width, 1% duty cycle
2.Pulse test : Pulse width < 2.5ms
September 14,2010-REV.07
PAGE . 1
SB2060LFCT
100
100
T
J
= 100°C
10
T
J
= 125°C
1
T
J
= 25°C
I
R
,Reverse Current (mA)
I
F
, Forward Current (A)
T
J
= 125°C
10
T
J
= 100°C
1
0.1
T
J
= 25°C
T
J
= 75°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.01
20
40
60
80
100
V
F
, Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.1 Typical Forward Characteristics Per Diode
10000
Fig.2 Typical Reverse Characteristics Per Diode
I
F
, Average Forward Current (A)
0.1
1
10
100
C
J
, Junction Capacitance (pF)
12.00
10.00
8.00
6.00
4.00
2.00
0.00
0
25
50
75
100
125
150
1000
100
10
V
R
, Reverse Bias Voltage (V)
T
C
, Case Temperature (°C)
Fig.3 Typical Junction Capacitance Per Diode
Fig.4 Forward Current Derating Curve Per Diode
September 14,2010-REV.07
PAGE . 2
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