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CMLDM7484

产品描述N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
产品类别分立半导体    晶体管   
文件大小583KB,共2页
制造商Central Semiconductor
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CMLDM7484概述

N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

CMLDM7484规格参数

参数名称属性值
厂商名称Central Semiconductor
包装说明PICOMINI-6
针数6
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOGIC LEVEL COMPATIBLE
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压30 V
最大漏极电流 (ID)0.45 A
最大漏源导通电阻0.46 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)10 pF
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL AND P-CHANNEL
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

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CMLDM7484
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7484
consists of complementary N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer Very Low rDS(ON) and Low
Threshold Voltage.
MARKING CODE: 8C7
SOT-563 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
BVDSS
BVDSS
VGS(th)
VSD
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
Notes:
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
SYMBOL
VDS
VGS
ID
PD
PD
PD
TJ, Tstg
Θ
JA
N-CH (Q1)
MIN
MAX
-
3.0
-
30
-
0.5
0.5
-
-
-
-
-
-
-
1.0
-
-
1.0
1.1
-
0.46
-
0.56
-
0.73
-
2
30
8.0
450
350
300
150
-65 to +150
357
P-CH (Q2)
MIN
MAX
-
3.0
-
-
30
0.5
-
0.5
-
-
-
-
-
-
1.0
-
-
1.0
-
1.1
-
1.1
-
2.0
-
3.3
UNITS
V
V
mA
mW
mW
mW
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
Ω
VDS=30V, VGS=0
VGS=0, ID=10μA
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=0, IS=400mA
VGS=0, IS=100mA
VGS=4.5V, ID=200mA
VGS=4.5V, ID=430mA
VGS=2.5V, ID=100mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=75mA
VGS=1.8V, ID=100mA
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R2 (27-January 2011)

 
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