PJSD03TG~PJSD36TG
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 100 Watts peak pules power( tp=8/20µs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
3~36 Volts
POWER
100 Watts
APPLICATIONS
• Case: SOD-723 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx.Weight : 0.00077 gram
• Marking : PJSD03TG : FS
PJSD05TG : FT
PJSD08TG : FU
PJSD12TG : FV
PJSD15TG : FW
PJSD24TG : FX
PJSD36TG : FY
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20
µ
s)
ESD Voltage
Operating Temperature
Storage Temperature
ELECTRICAL CHARA CTERISTICS
Symbol
Value
100
25
-50 to 150
-50 to 150
Units
W
KV
O
P
PK
V
ESD
T
J
T
STG
C
C
O
PJSD03TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=10A
0Vdc Bias=f=1MHz
3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
180
100
Max.
3.3
-
125
7.5
-
-
Units
V
V
µA
V
pF
pF
REV.0.1-FEB.16.2009
PAGE . 1
PJSD03TG~PJSD36TG
PJSD05T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=5V
I
P P
=
8.5
A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6
-
-
-
-
Typical
-
-
-
-
-
65
Max.
5
-
10
Units
V
V
µA
V
pF
pF
9.8
110
-
PJSD08T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=8V
I
P P
=
7.5
A
0Vdc Bias=f=1MHz
8Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
-
Typical
-
-
-
-
Max.
8
-
10
13.4
Units
V
V
µA
V
pF
pF
-
40
70
-
PJSD12T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=12V
I
P P
=
6.7
A
0Vdc Bias=f=1MHz
12Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
-
Typical
-
-
-
-
-
30
Max.
12
-
1
20
46
Units
V
V
µA
V
pF
pF
-
PJSD15T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=15V
I
P P
=
6
A
0Vdc Bias=f=1MHz
15Vdc Bias=f=1MHz
Min.
-
16.7
-
-
-
-
Typical
-
-
-
-
Max.
15
-
1
2
4
Units
V
V
µA
V
pF
pF
-
20
35
-
REV.0.1-FEB.16.2009
PAGE . 2
PJSD03TG~PJSD36TG
PJSD24T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=24V
I
P P
=
4.5
A
0Vdc Bias=f=1MHz
24Vdc Bias=f=1MHz
Min.
-
26.7
-
-
-
-
Typical
-
-
-
Max.
24
-
1
Units
V
V
µA
V
pF
pF
-
-
14
43
25
-
PJSD36T
G
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
R W M
V
B R
I
R
V
C
C
J
C
J
Conditions
-
I
B R
=1mA
V
R
=36V
I
P P
=
3
A
0Vdc Bias=f=1MHz
36Vdc Bias=f=1MHz
Min.
-
40
-
-
-
-
Typical
-
-
-
-
-
Max.
36
-
1
52
18
Units
V
V
µA
V
p
pF
12
-
PJSD03TG
PJ : Panjit
SD : Singal direction
03 : Voltage
TG : Package SOD-723
REV.0.1-FEB.16.2009
PAGE . 3
PJSD03TG~PJSD36TG
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
Peak Value I
PP
TEST
m
100
WAVEFORM
PARAMETERS
-t
80
e
%Of Rated Power
100
80
60
40
20
0
Peak Pulse Power
8/20
m
s
m
60
40
20
0
0
5
10
t
d
=t I
PP
/2
Average Power
0
25
50
75
100
125 150
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature-
O
C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
400
C-C apa cita nce -pF
300
200
100
0
0
1
2
3
4
5
6
V
R
=Reverse Voltage-Volts
FIG. 4-Typical Reverse Voltage vs Capacitance
REV.0.1-FEB.16.2009
PAGE .
4
PJSD03TG~PJSD36TG
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.16.2009
PAGE . 5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
