PRELIMINARY DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210833
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
NF = 0.9 dB TYP. @ V
CE
= 5 V, I
C
= 30 mA, f = 1 GHz
• P
O (1 dB)
= 18.5 dBm TYP. @ V
CE
= 5 V, I
C (set)
= 30 mA, f = 1 GHz
• OIP
3
= 31 dBm TYP. @ V
CE
= 5 V, I
C (set)
= 30 mA, f = 1 GHz
• Maximum stable power gain: MSG =16.0 dB TYP. @ V
CE
= 5 V, I
C
= 30 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : f
T
= 15.5 GHz
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number
NESG210833
Order Number
NESG210833-A
Package
3-pin minimold
(33 PKG) (Pb-Free)
NESG210833-T1B
NESG210833-T1B-A
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Base Current
Note 1
Symbol
V
CBO
V
CES
V
CEO
I
B
I
C
P
tot
Note 2
Ratings
5.5
13
5.5
36
100
700
150
−65
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
T
j
T
stg
Notes 1.
Depend on the ESD protect device.
2.
Mounted on 3.8 cm
×
9.0 cm
×0.8
mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10765EJ01V0DS (1st edition)
Date Published June 2009 NS
Printed in Japan
2009
NESG210833
•
The information in this document is current as of June, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
•
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appear in this document.
•
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granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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•
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