MBR2040FCT SERIES
20 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.134(3.4)
0.118(3.0)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
20 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.406(10.3)
0.381(9.7)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.177(4.5)
0.137(3.5)
• Lead free in comply with EU RoHS 2002/95/EC directives
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RAME TE R
Maxi mum Recurre nt P eak Re verse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blo cki ng Voltage
Maxi mum A ve ra ge F orward C urrent
(S ee fi g .1)
Pea k F orward S urg e C urrent : 8.3ms si ngle
half si ne-wa ve s uperi mposed on ra te d load
(J ED E C method)
Maxi mum F o rward Voltage at 10A , pe r leg
Maxi mum D C Re verse C urre nt T
J
=25
O
C
at Rated D C Blo cki ng Voltage T
J
=125
O
C
Typi ca l The rmal Res i s tance
Ope ra ting and S torage J unc ti o n
Temperature Range
SYMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
,T
S TG
MB R2040FC T MB R2045F C T MB R2050F C T MB R2060F C T MB R208 0FC T MB R2090FC T MB R20100FC T MB R20150F C T MB R20200 FC T
UNITS
V
V
V
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
20
90
63
90
10 0
70
10 0
1 50
1 05
1 50
20 0
140
20 0
200
A
0.7
0.75
0.0 5
20
2
0.8
0.9
V
mA
O
C / W
O
-55 to + 150
-65 to +175
C
Notes :
Both Bonding and Chip structure are available.
April 22,2011-REV.04
PAGE . 1
MBR2040FCT SERIES
C
J
, Junction Capacitance
(pF)
12
10000
I
F
, Forward Current (A)
10
8
6
4
2
0
0
20
40
60
80
100 120 140 160 180
40V
45~200V
1000
100
10
1
0.1
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
100
I
R
,Reverse Current (mA)
I
F
, Forward Current (A)
1000
T
J
= 175°C
100
10
T
J
= 125°C
1
0.1
0.01
0.001
20
40
60
T
J
= 25°C
80
100
T
J
= 150°C
T
J
= 75°C
T
J
= 25°C
40-45V
10
50-60V
1
80-100V
150-200V
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
April 22,2011-REV.04
PAGE . 2
MEMS传感器
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