To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., G
a
= 16 dB TYP. @ f = 4 GHz, V
DS
= 2 V, I
D
= 15 mA
NF = 0.35 dB TYP., G
a
= 19 dB TYP. @ f = 2 GHz, V
DS
= 2 V, I
D
= 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3510M04
NE3510M04-T2
Order Number
NE3510M04-A
NE3510M04-T2-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
15 kpcs/reel
Marking
V81
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
<R>
NE3510M04-T2B NE3510M04-T2B-A
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4.0
−3.0
I
DSS
140
125
+150
−65
to +150
Unit
V
V
mA
μ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10676EJ02V0DS (2nd edition)
Date Published October 2008 NS
Printed in Japan
The mark <R> shows major revised points.
2007, 2008
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE3510M04
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
−
−
−
TYP.
2
15
−
MAX.
3
30
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Gain 1 dB Compression
Output Power
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
P
O (1 dB)
V
DS
= 2 V, I
D
= 15 mA (Non-RF),
f = 4 GHz
V
GS
=
−3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
μ
A
V
DS
= 2 V, I
D
= 15 mA
V
DS
= 2 V, I
D
= 15 mA, f = 4 GHz
Test Conditions
MIN.
−
42
−0.35
70
−
14.5
−
TYP.
0.5
70
−0.7
−
0.45
16
+11
MAX.
10
97
−1.10
−
0.65
−
−
Unit
μ
A
mA
V
mS
dB
dB
dBm
2
Data Sheet PG10676EJ02V0DS
NE3510M04
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
100
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
90
V
DS
= 2 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
Drain Current I
D
(mA)
200
80
70
60
50
40
30
20
10
0
–1.0
150
100
50
0
50
100
150
200
250
–0.8
–0.6
–0.4
–0.2
0
Ambient Temperature T
A
(°C)
Gate to Source Voltage V
GS
(V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
Minimum Noise Figure NF
min
(dB)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
24
V
DS
= 2 V
22
I
D
= 15 mA
20
18
16
14
12
10
8
6
4
2
0
15
100
90
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
–0.1
V
–0.2
V
–0.3
V
–0.4
V
–0.5
V
–0.6
V
–0.7
V
1
2
3
4
5
Associated Gain G
a
(dB)
G
a
Drain Current I
D
(mA)
80
70
60
50
40
30
20
10
0
0
NF
min
5
10
Frequency f (GHz)
Drain to Source Voltage V
DS
(V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
Minimum Noise Figure NF
min
(dB)
Minimum Noise Figure NF
min
(dB)
1.2
f = 2.0 GHz
1.1
V
DS
= 2 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
24
22
20
18
16
14
12
10
8
6
4
2
0
35
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
24
f = 4.0 GHz
22
V
DS
= 2 V
20
18
16
14
12
10
8
6
4
2
0
25
30
35
Associated Gain G
a
(dB)
G
a
G
a
NF
min
NF
min
5
10
15
20
25
30
5
10
15
20
Drain Current I
D
(mA)
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10676EJ02V0DS
3
Associated Gain G
a
(dB)
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