Datasheet> 器件分类 > 存储> 存储> MT29C8G96MAZBADJV-5IT

文档预览

MT29C8G96MAZBADJV-5IT: 产品描述Memory Circuit, 512MX16, CMOS, PBGA168, VFBGA-168; 产品类别存储存储; 文件大小4MB，共220页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/; 标准

下载文档详细参数全文预览

MT29C8G96MAZBADJV-5IT概述

Memory Circuit, 512MX16, CMOS, PBGA168, VFBGA-168

MT29C8G96MAZBADJV-5IT规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Micron Technology
包装说明	VFBGA-168
Reach Compliance Code	compliant
其他特性	MOBILE LPDDR DEVICE ALSO AVAILABLE
JESD-30 代码	S-PBGA-B168
长度	12 mm
内存密度	8589934592 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
功能数量	1
端子数量	168
字数	536870912 words
字数代码	512000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512MX16
封装主体材料	PLASTIC/EPOXY
封装代码	VFBGA
封装形状	SQUARE
封装形式	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED
座面最大高度	1 mm
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	0.5 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	12 mm

MT29C8G96MAZBADJV-5IT文档预览

Micron Confidential and Proprietary

168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP

Features

NAND Flash and Mobile LPDDR

168-Ball Package-on-Package (PoP) MCP

Combination Memory (TI OMAP™)

MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT,

MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

MT29C8G96MAYBADJV-5 WT, MT29C8G96MAZBADJV-5 WT

MT29C4G48MAZBAAKQ-5 IT, MT29C4G96MAZBACJG-5 IT

MT29C8G96MAZBADJV-5 IT

Features

•

Micron

NAND Flash and LPDDR components

RoHS-compliant, “green” package

Separate NAND Flash and LPDDR interfaces

Space-saving multichip package/package-on-package

combination

• Low-voltage operation (1.70–1.95V)

• Wireless temperature range: –25°C to +85°C

• Industrial temperature range: –40°C to +85°C

Figure 1: PoP Block Diagram

NAND Flash

Power

NAND Flash

Device

NAND Flash

Interface

NAND Flash-Specific Features

Organization

• Page size

– x8: 2112 bytes (2048 + 64 bytes)

– x16: 1056 words (1024 + 32 words)

• Block size: 64 pages (128K + 4K bytes)

LPDRAM Power

LPDRAM

Device

LPDRAM

Interface

Mobile LPDDR-Specific Features

•

No external voltage reference required

No minimum clock rate requirement

1.8V LVCMOS-compatible inputs

Programmable burst lengths

Partial-array self refresh (PASR)

Deep power-down (DPD) mode

Selectable output drive strength

STATUS REGISTER READ (SRR) supported

Notes:

1. Contact factory for remapped SRR output.

2. For physical part markings, see page 2.

PDF: 09005aef846d1f3b

168ball_nand_lpddr_j4p2_j4x2_j4x3_omap.pdf - Rev. D 4/13

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP

Features

Part Numbering Information

Micron NAND Flash and LPDRAM devices are available in different configurations and densities. The MCP/PoP

part numbering guide is available at

www.micron.com/numbering.

Figure 2: Part Number Chart

MT 29C XX XXX X

Micron Technology

Product Family

NAND Flash Density

LPDRAM Density

Operating Voltage Range

NAND Flash Configuration

XX -X

XX XX

Production Status

Operating Temperature Range

LPDRAM Access Time

Package Codes

Chip Count

LPDRAM Configuration

Device Marking

Due to the size of the package, the Micron-standard part number is not printed on the top of the device. Instead,

an abbreviated device mark consisting of a 5-digit alphanumeric code is used. The abbreviated device marks are

cross-referenced to the Micron part numbers at the FBGA Part Marking Decoder site:

www.micron.com/decoder.

To view the location of the abbreviated mark on the device, refer to customer service note CSN-11, “Product Mark/

Label,” at

www.micron.com/csn.

PDF: 09005aef846d1f3b

168ball_nand_lpddr_j4p2_j4x2_j4x3_omap.pdf - Rev. D 4/13

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP

Features

Contents

MCP General Description ...............................................................................................................................

Ball Assignments and Descriptions .................................................................................................................

Electrical Specifications ..................................................................................................................................

Device Diagrams ............................................................................................................................................

Package Dimensions .......................................................................................................................................

4Gb, 8Gb: x8, x16 NAND Flash Memory ...........................................................................................................

Features .....................................................................................................................................................

General Description .......................................................................................................................................

Architecture ...................................................................................................................................................

Device and Array Organization ........................................................................................................................

Asynchronous Interface Bus Operation ...........................................................................................................

Asynchronous Enable/Standby ...................................................................................................................

Asynchronous Commands ..........................................................................................................................

Asynchronous Addresses ............................................................................................................................

Asynchronous Data Input ...........................................................................................................................

Asynchronous Data Output .........................................................................................................................

Write Protect# ............................................................................................................................................

Ready/Busy# ..............................................................................................................................................

Device Initialization .......................................................................................................................................

Command Definitions ....................................................................................................................................

Reset Operations ............................................................................................................................................

RESET (FFh) ...............................................................................................................................................

Identification Operations ................................................................................................................................

READ ID (90h) ............................................................................................................................................

READ ID Parameter Tables ..............................................................................................................................

READ PARAMETER PAGE (ECh) ......................................................................................................................

Bare Die Parameter Page Data Structure Tables ................................................................................................

READ UNIQUE ID (EDh) ................................................................................................................................

Feature Operations .........................................................................................................................................

SET FEATURES (EFh) ..................................................................................................................................

GET FEATURES (EEh) .................................................................................................................................

Status Operations ...........................................................................................................................................

READ STATUS (70h) ...................................................................................................................................

READ STATUS ENHANCED (78h) ................................................................................................................

Column Address Operations ...........................................................................................................................

RANDOM DATA READ (05h-E0h) ................................................................................................................

RANDOM DATA READ TWO-PLANE (06h-E0h) ............................................................................................

RANDOM DATA INPUT (85h) ......................................................................................................................

PROGRAM FOR INTERNAL DATA INPUT (85h) ...........................................................................................

Read Operations .............................................................................................................................................

READ MODE (00h) .....................................................................................................................................

READ PAGE (00h-30h) ................................................................................................................................

READ PAGE CACHE SEQUENTIAL (31h) ......................................................................................................

READ PAGE CACHE RANDOM (00h-31h) ....................................................................................................

READ PAGE CACHE LAST (3Fh) ..................................................................................................................

READ PAGE TWO-PLANE 00h-00h-30h .......................................................................................................

Program Operations .......................................................................................................................................

PROGRAM PAGE (80h-10h) .........................................................................................................................

PROGRAM PAGE CACHE (80h-15h) .............................................................................................................

PROGRAM PAGE TWO-PLANE (80h-11h) ....................................................................................................

PDF: 09005aef846d1f3b

168ball_nand_lpddr_j4p2_j4x2_j4x3_omap.pdf - Rev. D 4/13

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP

Features

Erase Operations ............................................................................................................................................ 81

ERASE BLOCK (60h-D0h) ............................................................................................................................ 81

ERASE BLOCK TWO-PLANE (60h-D1h) ....................................................................................................... 82

Internal Data Move Operations ....................................................................................................................... 83

READ FOR INTERNAL DATA MOVE (00h-35h) ............................................................................................. 84

PROGRAM FOR INTERNAL DATA MOVE (85h–10h) ..................................................................................... 85

PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) ................................................................. 86

Block Lock Feature ......................................................................................................................................... 87

WP# and Block Lock ................................................................................................................................... 87

UNLOCK (23h-24h) .................................................................................................................................... 87

LOCK (2Ah) ................................................................................................................................................ 90

LOCK TIGHT (2Ch) ..................................................................................................................................... 91

BLOCK LOCK READ STATUS (7Ah) .............................................................................................................. 92

One-Time Programmable (OTP) Operations .................................................................................................... 94

Legacy OTP Commands .............................................................................................................................. 94

OTP DATA PROGRAM (80h-10h) ................................................................................................................. 95

RANDOM DATA INPUT (85h) ...................................................................................................................... 96

OTP DATA PROTECT (80h-10) ..................................................................................................................... 97

OTP DATA READ (00h-30h) ......................................................................................................................... 99

Two-Plane Operations ................................................................................................................................... 101

Two-Plane Addressing ............................................................................................................................... 101

Interleaved Die (Multi-LUN) Operations ......................................................................................................... 110

Error Management ........................................................................................................................................ 111

Internal ECC and Spare Area Mapping for ECC ............................................................................................... 113

Electrical Specifications ................................................................................................................................. 115

Electrical Specifications – DC Characteristics and Operating Conditions .......................................................... 117

Electrical Specifications – AC Characteristics and Operating Conditions .......................................................... 119

Electrical Specifications – Program/Erase Characteristics ................................................................................ 122

Asynchronous Interface Timing Diagrams ...................................................................................................... 123

2Gb: x16, x32 Mobile LPDDR SDRAM ............................................................................................................. 135

Features .................................................................................................................................................... 135

General Description .................................................................................................................................. 137

Functional Block Diagrams ............................................................................................................................ 138

Electrical Specifications ................................................................................................................................. 140

Electrical Specifications – I

Parameters ....................................................................................................... 143

Electrical Specifications – AC Operating Conditions ........................................................................................ 149

Output Drive Characteristics .......................................................................................................................... 154

Functional Description .................................................................................................................................. 157

Commands ................................................................................................................................................... 158

DESELECT ................................................................................................................................................ 159

NO OPERATION ........................................................................................................................................ 159

LOAD MODE REGISTER ............................................................................................................................ 159

ACTIVE ..................................................................................................................................................... 159

READ ........................................................................................................................................................ 160

WRITE ...................................................................................................................................................... 161

PRECHARGE ............................................................................................................................................. 162

BURST TERMINATE .................................................................................................................................. 163

AUTO REFRESH ........................................................................................................................................ 163

SELF REFRESH .......................................................................................................................................... 164

DEEP POWER-DOWN ................................................................................................................................ 164

Truth Tables .................................................................................................................................................. 165

State Diagram ............................................................................................................................................... 170

PDF: 09005aef846d1f3b

168ball_nand_lpddr_j4p2_j4x2_j4x3_omap.pdf - Rev. D 4/13

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP

Features

Initialization ................................................................................................................................................. 171

Standard Mode Register ................................................................................................................................. 174

Burst Length ............................................................................................................................................. 175

Burst Type ................................................................................................................................................. 175

CAS Latency .............................................................................................................................................. 176

Operating Mode ........................................................................................................................................ 177

Extended Mode Register ................................................................................................................................ 178

Temperature-Compensated Self Refresh ..................................................................................................... 178

Partial-Array Self Refresh ........................................................................................................................... 179

Output Drive Strength ............................................................................................................................... 179

Status Read Register ...................................................................................................................................... 180

Bank/Row Activation ..................................................................................................................................... 182

READ Operation ............................................................................................................................................ 183

WRITE Operation .......................................................................................................................................... 194

PRECHARGE Operation ................................................................................................................................. 206

Auto Precharge .............................................................................................................................................. 206

Concurrent Auto Precharge ........................................................................................................................ 207

AUTO REFRESH Operation ............................................................................................................................ 213

SELF REFRESH Operation .............................................................................................................................. 214

Power-Down ................................................................................................................................................. 215

Deep Power-Down .................................................................................................................................... 217

Clock Change Frequency ............................................................................................................................... 219

Revision History ............................................................................................................................................ 220

Rev. D – 4/13 ............................................................................................................................................. 220

Rev. C – 12/12 ............................................................................................................................................ 220

Rev. B – 10/12 ............................................................................................................................................ 220

Rev. A – 05/11 ............................................................................................................................................ 220

PDF: 09005aef846d1f3b

168ball_nand_lpddr_j4p2_j4x2_j4x3_omap.pdf - Rev. D 4/13

Micron Technology, Inc. reserves the right to change products or specifications without notice.

查看更多（仅显示前5页内容，查看全部内容请下载文档。）>

推荐资源

何时应当使用 PWM 控制器？: PWM是一种适用于多种电源拓扑结构的控制方法。任何拓扑结构的电源都有非常广泛的用途，可谓无处不在；而PWM的应用范围也颇为广泛。 391476 PWM是脉冲宽度调制的缩写。在开关电 ......; qwqwqw2088 模拟与混合信号

【从0教学嵌入式Linux】第十三集: 第13课：编写LED驱动程序 2420591.LED驱动属于字符设备，我们进入Linux内核的字符设备驱动目录，进行编辑2420502.新建文件led.c并对其进行编辑2420513.在文件中添加如下代码2420522420532420542 ......; babyking 嵌入式系统

再见2019，你好2020！: 再见2019，你好2020！2019找到自己奋斗的方向，因为选择这个奋斗方向，结识了电子工程福利社，在电子福利社中一边为自己充电，一边还能赢取小礼品，更重要的是电子福利社的知识帮我度过了工作中 ......; 果轩天聊聊、笑笑、闹闹

SensorTile.box开箱问题: 本帖最后由 KJGL 于 2020-4-18 09:18 编辑一开始按照教程进行，在APP中更新固件时，与板子的蓝牙就断了，我就退出APP，之后APP就找不到板子了。而且今天连上电源，APP也搜不到设备。将板子 ......; KJGL ST MEMS传感器创意设计大赛专区

参与HELPER2416开发板助学计划：使用usb-gadget方式传输文件出错: 开发板使用手册上写的是:159238159239 在超级终端上输入这两个命令却提示:159240 这是什么原因呢? ...; 有缘于你嵌入式系统

请问 51单片机中 IE寄存器中的EX0位和 TCON寄存器中的IE0位是不是重复: 请问 51单片机中 IE寄存器中的EX0位和 TCON寄存器中的IE0位是不是重复，从下图的资料中看，这两位不都是用于 INT0 可不可以产生中断的吗，这不是重复吗？ 632198 ...; 一沙一世 51单片机

STM32F4 编程手册学习1_编程模型

1. 处理器模式与特权等级处理器模式分为以下两种：线程模式：用来执行应用软件；处理器从reset出来时，进入线程模式； CONTROL寄存器控制软件的执行状态时特权的还是非特权的。处理模式：用来处理异常；完成异常处理后，进入线程模式；该模式下，软件运行在特权等级上。特权等级有以下两种：非特权：对于MSR、MRS指令受限的权限，不能使用CPS指令；不能使用系统定时器...[详细]
STM32单片机是如何启动的？

STM32中的内存 STM32中的内存包含两块主要区域：flash memory（只读）、static ram memory（SRAM，读写）。其中，flash memory 起始于0x08000000，SRAM起始于0x20000000。flash memory的第一部分存放异常向量表，表中包含了指向各种异常处理程序的指针。比如说，RESET Handler便位于0x08000004的位置，在...[详细]
韩企抱团，能否破解电池困境？

从全球领先到失去市场，韩国电池厂一直想要夺回失去的市场和尊严，但是面对以宁德时代和比亚迪为代表的中国电池厂商，却难以形成真正的竞争。根据统计，今年上半年，仅宁德时代和比亚迪就占全球电动汽车电池销量的 55%以上，高于 2024 年同期的53%。与此同时，韩国电池厂商LG Energy、SK On和三星SDI的合计市场份额下降至16.4%，比去年同期下降5.4%。虽然韩...[详细]
加热板：真空共晶炉的热力中心与材料塑造者

真空共晶炉是一个关键的设备，用于制造和处理各种材料，尤其是在微电子和纳米技术领域。这种设备的核心组件之一就是加热板。在本文中，我们将详细介绍真空共晶炉的加热板，包括其结构，功能，以及在整个真空共晶过程中的作用。首先，我们需要了解什么是加热板。简单来说，加热板是真空共晶炉中的一个重要部分，负责将电能转化为热能，提供足够的热量以满足共晶生长的需求。加热板通常由耐高温的材料制成，如石墨或者特殊的...[详细]
天太机器人斩获全球首个万台人形机器人大单

8月20日，天太机器人有限公司与山东未来机器人技术有限公司、山东未来数据科技有限公司、港仔机器人集团等战略合作伙伴，共同签署全球首个具身智能人形机器人10000台订单。这不仅是全球人形机器人行业诞生以来数量最大的单笔订单，更意味着，曾被视作“科幻”的人形机器人，正式走出实验室、跨越概念阶段，作为一种可量产、可交付、可解决实际问题的生产力工具，浩浩荡荡地涌入现实世界的千行百业。天太机...[详细]
“2025年7月中国充电桩增至1669.6万个，桩车比1:1.8满足新能源车增长”

8月22日，国家能源局发布最新数据，截至2025年7月底，我国电动汽车充电基础设施总数达到1669.6万个，同比增长53%。其中，公共充电设施为420.2万个，同比增长38%；私人充电设施为1249.4万个，同比增长58.8%。今年上半年，新能源汽车国内销量为587.8万辆，充电基础设施与新能源汽车的快速增长保持同步，桩车增量比为1:1.8，表明充电基础设施建设基本能够满足新能源汽车的快速发展需...[详细]
日产将与LiCAP合作研发固态电池技术

据外媒报道，日产汽车近日已与美国电池技术公司LiCAP Technologies达成合作，旨在共同推进下一代电动汽车干法电极生产工艺技术的研发。双方将共同致力于开发全固态电池（ASSB）正极的干法电极生产工艺技术，该技术是推动电动汽车发展的核心组件之一。图片来源：日产此次合作正值日产汽车计划在2028财年前推出搭载自主研发的全固态电池的电动汽车之际，该公司希望通过加强研发活动...[详细]
麦格纳推出集成式舱内感知系统：将摄像头与雷达融合用于舱内主动安全

麦格纳推出的集成式舱内感知系统将视觉与毫米波雷达数据融合，用于检测乘员存在、识别儿童滞留、监测驾驶员疲劳及生命体征，支持无接触安全带检测等功能。图片来源：麦格纳该系统通过多模态验证提升检测鲁棒性，可直接响应法规要求（例如儿童滞留报警）并与车载HVAC、座椅和安全控制单元联动，实现出车前的自动巡检与离车提醒。该类集成方案特别适配家庭化MPV、带自动驾驶功能的大型商用车以及共享出行业务...[详细]
Teletrac Navman推出Multi IQ多摄像头行车记录仪

Teletrac Navman推出Multi IQ行车记录仪，这是一款基于云端、专为大型商用车运营商打造的解决方案。它最多可连接五个摄像头，覆盖车辆内部、侧面、后部等区域，配合内置的高清双前置和驾驶员侧行车记录仪，解决了大型车辆盲点问题。图片来源： Teletrac 该记录仪运用先进人工智能分析技术，能检测疲劳驾驶、分心驾驶等事件，并以高清格式记录。其集成于Teletrac Navm...[详细]
小白转行入门STM32----手机蓝牙控制STM32单片机点亮LED

一、通信基础知识 1.1 通信到底传输的是什么？在逻辑层面，通信传输的是比特也就是二进制数。在物理层面上，当线路为电路时，发送方发送一个个持续小段时间的电压信号来表示这些二进制数，比如双方约定一个0.001秒的0V代表数字0，5V代表数字1，发送方发送先后发送两个持续0.001秒的0V和一个0.001秒的5V，就是相当于发送了001。这种持续一段时间的电压信号就是码元。当线路为无线电波时，码元...[详细]
STM32中的C语言知识点

下面就列出了一些STM32中重要的C语言知识点，初学的小伙伴可以多读几遍，其中大多知识点之前都有写过，这里重新整理一下，更详细地分析解释可以阅读附带的链接。 assert_param 断言（assert）就是用于在代码中捕捉这些假设，可以将断言看作是异常处理的一种高级形式。断言表示为一些布尔表达式，程序员相信在程序中的某个特定点该表达式值为真。可以在任何时候启用和禁用断言验证，因此可以在测试时...[详细]
对电动汽车而言，给电池充电有什么技巧吗

充电是电动汽车离不开的一个话题，电池对于新能源汽车而言是核心的部件，对于电动汽车来说，给电池充多少电最好？根据现在的电动汽车采用的电池技术来说，充多少电根据用车场景去进行判断，对于电动汽车来说，在充电的时候也不一定非要充满，达到90%以上，或者能够满足你下一次出行需要的里程数就足够了。现在电动汽车采用锂离子电池，锂离子动力电池没有记忆功能，能够满足快速充电的需求，但从电池的构造上面而言，电...[详细]
SiC MOSFET 界面陷阱检测升级：Force-I QSCV 方法详解

电容-电压 (C-V) 测量广泛用于半导体材料和器件表征，可提取氧化物电荷、界面陷阱、掺杂分布、平带电压等关键参数。传统基于 SMU 施加电压并测量电流的准静态方法适用于硅 MOS，但在 SiC MOS 器件上因电容更大易导致结果不稳定。为解决这一问题，Keithley 4200A-SCS 引入 Force-I QSCV 技术，通过施加电流并测量电压与时间来推导电容，获得更稳定可靠的数据。 ...[详细]
中星联华科技受邀参加第三届信息通信仪器仪表产业技术论坛

8月19日，中星联华科技受邀参加第三届信息通信仪器仪表产业技术论坛、信息通信测试仪器仪表专委会一届二次委员会。本次论坛由中国仪器仪表学会信息通信测试仪器仪表专业委员会（以下简称“专委会”）主办，中国移动研究院承办，以“ ‘仪’筑新质生产力，‘智’引测试新未来 ” 为主题，汇聚了中国移动、中国电信、中国联通、中国信通院及北京邮电大学等近百家单位代表，共推产业技术创新与协同发展。作为...[详细]
学习stm32时踩平的一个坑：#223-D: function "EXTI_Init" declared implicitly

最近买了板子，跟着正点原子的电子资料学习stm32。学到外部中断时出现这样一个问题：如图代码提示有问题，编译后出现警告： main.c(25): warning: #223-D: function EXTI_Init declared implicitly 编译可以通过，代码下载运行也没有问题。可作为一个完美主义者，有警告就要消灭。不然感觉很不爽。对不？这种情况下，通常是由于文件包含出了...[详细]

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多