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TIP145LEADFREE: 产品描述Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin; 产品类别分立半导体晶体管; 文件大小264KB，共2页; 制造商Central Semiconductor; 标准

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TIP145LEADFREE概述

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

TIP145LEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	10 A
集电极-发射极最大电压	60 V
配置	DARLINGTON
最小直流电流增益 (hFE)	500
JEDEC-95代码	TO-218
JESD-30 代码	R-PSFM-T3
JESD-609代码	e3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	260
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	NO
端子面层	MATTE TIN (315)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	10
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

TIP145LEADFREE相似产品对比

	TIP145LEADFREE	TIP141LEADFREE	TIP140LEADFREE	TIP146LEADFREE	TIP147LEADFREE	TIP142LEADFREE
描述	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	10 A	10 A	10 A	10 A	10 A	10 A
集电极-发射极最大电压	60 V	80 V	60 V	80 V	100 V	100 V
配置	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
最小直流电流增益 (hFE)	500	500	500	500	500	500
JEDEC-95代码	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609代码	e3	e3	e3	e3	e3	e3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	260	260	260	260	260	260
极性/信道类型	PNP	NPN	NPN	PNP	PNP	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子面层	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	10	10	10	10	10	10
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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