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TSDF1220W

产品描述Transistor,
产品类别分立半导体    晶体管   
文件大小81KB,共6页
制造商Vishay Telefunken (Vishay)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

TSDF1220W概述

Transistor,

TSDF1220W规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay Telefunken (Vishay)
Reach Compliance Codeunknown
最大集电极电流 (IC)0.04 A
配置Single
最小直流电流增益 (hFE)50
JESD-609代码e0
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)0.2 W
表面贴装YES
端子面层Tin/Lead (Sn/Pb)

TSDF1220W文档预览

TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise applications such as preamplifiers, mix-
ers and oscillators in analog and digital TV–systems
(e.g., satellite tuners) up to microwave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency f
T
= 12 GHz
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1220 Marking: F20
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1220R Marking: 20F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
TSDF1220W Marking: WF2
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1220RW Marking: W2F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
6
2
40
200
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
60
°
C
Document Number 85066
Rev. 6, 30-Jun-00
www.vishay.de
FaxBack +1-408-970-5600
1 (6)
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 5 V, I
C
= 20 mA
Symbol Min Typ Max Unit
I
CES
100
m
A
I
CBO
100 nA
I
EBO
2
m
A
V
(BR)CEO
6
V
V
CEsat
0.1 0.5
V
h
FE
50 100 150
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point at
output
Test Conditions
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 3 mA,
Z
S
= Z
Sopt
, Z
L
= 50
W
, f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA,
Z
S
= Z
Sopt
, Z
L
= 50
W
, f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA,
Z
0
= 50
W
, f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA, f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
S
21e
2
IP
3
Min
Typ
12
0.3
0.35
0.5
1.2
14
12.5
22
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dBm
www.vishay.de
FaxBack +1-408-970-5600
2 (6)
Document Number 85066
Rev. 6, 30-Jun-00
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
300
P
tot
– Total Power Dissipation ( mW )
250
200
150
100
50
0
0
96 12159
0.5
f=1MHz
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
V
CB
– Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
14289
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
20
f
T
– Transition Frequency ( GHz )
16
12
8
4
0
0
14288
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.0
F – Noise Figure ( dB )
V
CE
=5V
f=2GHz
2.5
2.0
1.5
1.0
0.5
0
V
CE
=5V
f=1GHz
Z
S
=50
W
V
CE
=3V
f=1GHz
5
10
15
20
25
30
14290
0
5
10
15
20
25
I
C
– Collector Current ( mA )
I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85066
Rev. 6, 30-Jun-00
www.vishay.de
FaxBack +1-408-970-5600
3 (6)
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Dimensions of TSDF1220 in mm
96 12240
Dimensions of TSDF1220R in mm
96 12239
www.vishay.de
FaxBack +1-408-970-5600
4 (6)
Document Number 85066
Rev. 6, 30-Jun-00
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Dimensions of TSDF1220W in mm
96 12237
Dimensions of TSDF1220RW in mm
96 12238
Document Number 85066
Rev. 6, 30-Jun-00
www.vishay.de
FaxBack +1-408-970-5600
5 (6)

TSDF1220W相似产品对比

TSDF1220W TSDF1220 TSDF1220RW TSDF1220R
描述 Transistor, Transistor, Transistor, Transistor,
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay)
Reach Compliance Code unknown unknown unknown unknown
最大集电极电流 (IC) 0.04 A 0.04 A 0.04 A 0.04 A
配置 Single Single Single Single
最小直流电流增益 (hFE) 50 50 50 50
JESD-609代码 e0 e0 e0 e0
最高工作温度 150 °C 150 °C 150 °C 150 °C
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W
表面贴装 YES YES YES YES
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

 
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