TK150F04K3L
MOSFETs
Silicon N-channel MOS (U-MOS)
TK150F04K3L
1. Applications
•
•
•
Switching Voltage Regulators
DC-DC Converters
Motor Drivers
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 1.7 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 40 V)
Enhancement mode: V
th
= 2.0 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Note 3)
(Note 3)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
40
±20
150
450
300
238
150
175
-55 to 175
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2011-09-26
Rev.1.0
TK150F04K3L
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
0.5
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: V
DD
= 25 V, T
ch
= 25 (initial), L = 11
µH,
R
G
= 25
Ω,
I
AR
= 150 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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2011-09-26
Rev.1.0
TK150F04K3L
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 4)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 6 V, I
D
= 75 A
V
GS
= 10 V, I
D
= 75 A
Min
40
20
2.0
Typ.
2.1
1.7
Max
±10
10
3.0
3.2
2.1
mΩ
V
Unit
µA
Note 4: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Fig. 6.2.1
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
9400
1200
1900
20
42
43
158
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
25
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DD
≈
32 V, V
GS
= 10 V, I
D
= 150 A
Min
Typ.
190
127
63
Max
Unit
nC
25
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 5)
(Note 5)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 150 A, V
GS
= 0 V
I
DR
= 150 A, V
GS
= 0 V
-dI
DR
/dt = 50 A/µs
Min
Typ.
80
80
Max
150
450
-1.2
V
ns
nC
Unit
A
Note 5: Ensure that the channel temperature does not exceed 175.
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2011-09-26
Rev.1.0
TK150F04K3L
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2011-09-26
Rev.1.0
TK150F04K3L
8. Moisture-Proof Packing
This device is packed in a moisture-proof laminated aluminum bag.
8.1. Precautions for Transportation and Storage (Note)
(1)
(2)
(3)
(4)
(5)
Avoid excessive vibration during transportation.
Do not toss or drop the packed devices to avoid ripping of the bag.
After opening the moisture-proof bag, the devices should be assembled within two weeks in an
environment of 5 to 30 and RH70% or below. Perform reflow at most twice.
The moisture-proof bag may be stored unopened for up to 24 months at 5 to 30 and RH90% or below.
If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the
30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as
follows:
Baking conditions: 125 for 48 hours.
Note: Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
The humidity indicator shows an approximate ambient humidity at 25.
If the ambient humidity is below 30%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink, the
devices should be baked before assembly.
Fig. 8.1.1 Humidity Indicator
5
2011-09-26
Rev.1.0
MEMS传感器
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