TS862C10R
(100V/10A)
Low IR Schottky barrier diode
10
+0.5
[200509]
Outline drawings, mm
0.9
±0.3
4.5
±0.2
1.32
Low IR
Low V
F
Center tap connection
1.5 Max
9.3
±0.5
Features
1.2
±0.2
5.08
0.8
—0.1
2.7
+0.2
0.4
+0.2
Applications
High frequency operation
DC-DC converters
AC adapter
1. Gate
2, 4. Drain
3. Source
Package : T-pack
Epoxy resin UL : V-0
Connection diagram
1
2
3
Maximum ratings and characteristics
Maximum ratings
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current
non-repetitive reverse surge power dissipation
Symbol
V
RSM
V
RRM
Viso
I
o
I
FSM
PRM
T
j
T
stg
Conditions
tw=500ns, duty=1/40
Rating
100
100
Unit
V
V
V
*
A
A
W
°C
°C
Te r m i n a l s - t o - C a s e ,
AC.1min.
Square wave, duty=1/2
Tc=132°C
1500
10
125
330
+150
-40 to +150
Sine wave 10ms
tw=10µs, Tj=25°C
Operating junction temperature
Storage temperature
*
Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
F
=5A
V
R
=100V
Junction to case
Max.
0.86
150
2.0
Unit
V
µA
°C/W
**Rating per element
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
0.3 to 0.5
2
N
·
m
g
3.0
±0.3
(100V / 10A )
Characteristics
TS862C10R (10A)
Forward Characteristic (typ.)
10
1
Reverse Characteristic (typ.)
Tj=150 C
Tj=125 C
Tj=100 C
o
o
o
IF Forward Current (A)
Tj=150 C
Tj=125 C
Tj=100 C
Tj=25 C
1
o
o
o
o
IR Reverse Current (mA)
10
10
0
10
-1
10
-2
Tj= 25 C
o
10
-3
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
-4
0
10
20
30
40
50
60
70
80
90 100 110 120
VF Forward Voltage (V)
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
6
Io
7
Reverse Power Dissipation (max.)
360 º
DC
WF Forward Power Dissipation (W)
PR Reverse Power Dissipation (W)
360 º
VR
5
4
3
Square wave
λ
=60
o
Square wave
λ
=120
o
Sine wave
λ
=180
o
4
Square wave
λ
=180
DC
o
3
2
2
1
Per 1element
0
0
1
2
3
4
5
6
1
0
0
10
20
Io Average Output Current (A)
160
Current Derating (Io-Tc) (max.)
1000
Junction Capacitance Characteristic (max.)
Tc Case Temperature ( C)
140
DC
Sine wave
λ
=180
130
360 º
o
o
Junction Capacitance (pF)
150
o
100
Square wave
λ
=180
Square wave
λ
=120
o
λ
120
110
0
5
10
15
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
543210987654321
543210987654321
43210987654321
543210987654321
5
Io
Square wave
λ
=60
o
VR=50V
Cj
10
1
10
100
1000
Io Average Output Current (A)
4321 4321
4321 4321
4321 4321
4321 4321
4321 4321
4321 4321
4321 4321
4321 4321
α
30
40
50
60
70
80
5
543210987654321
543210987654321
543210987654321
543210987654321
λ
6
α
=180
o
90 100 110 120
VR Reverse Voltage (V)
VR
Reverse Voltage (V)
(100V / 10A )
TS862C10R (10A)
1000
Surge Capability (max.)
IFSM Peak Half - Wave Current (A)
100
10
1
10
100
Number of Cycles at 50Hz
Surge Current Ratings (max.)
1000
IFSM PeakHAlf-WaveCurrent (A)
100
10
1
10
100
1000
tTime (ms) Sinewave
10
1
Transient Thermal Impedance (max.)
(°C/W)
Rth(j-c):2.0°C/W
Transient Thermal Impedance
10
0
10
-1
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
http://www.fujielectric.co.jp/fdt/scd/
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