FMG2G300LS60E
IGBT
FMG2G300LS60E
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction as
well as short circuit ruggedness. It’s designed for the
applications such as welder.
Features
•
•
•
•
•
Short Circuit Rated Time; 10us @ T
C
=100
°C,
V
GE
= 15V
Low Saturation Voltage: V
CE
(sat) = 1.4 V @ I
C
= 300A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Package Code : 7PM-HA
Application
• AC/ DC Welder
E1/C2
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
V
ISO
Mounting Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M6
@ T
C
= 100°C
FMG2G300LS60E
600
± 20
300
600
300
600
892
10
-40 to +150
-40 to +125
2500
4.0
4.0
Units
V
V
A
A
A
A
W
us
°C
°C
V
N.m
N.m
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
Electrical Characteristics of IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
= 300mA, V
CE
= V
GE
I
C
= 300A
,
V
GE
= 15V
5.0
--
6.5
1.4
8.5
1.8
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 300 V, I
C
= 300A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
0.23
0.21
0.43
2.43
13
180
0.3
0.23
0.46
4.1
15
260
--
990
210
350
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
us
us
us
us
mJ
mJ
us
us
us
us
mJ
mJ
us
nC
nC
nC
V
CC
= 300 V, I
C
= 300A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 300 V, V
GE
= 15V
100°C
@
T
C
=
V
CE
= 300 V, I
C
=300A,
V
GE
= 15V
Electrical Characteristics of DIODE
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
T
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 300A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 300A
di / dt = 600 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
32
63
1440
4095
Max.
2.8
--
130
--
42
--
2700
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.035
240
Max.
0.14
0.22
--
--
Units
°C/W
°C/W
°C/W
g
©2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
4 0 0
Common Emitter
V
GE
= 15V
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
7
6
5
4
T o ff
3
2
1
T f
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Rg = 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
[ A ]
3 0 0
2 0 0
1 0 0
0
0 . 0
0 . 4
0 . 8
1 . 2
1 . 6
C E
S w it c h i n g T i m e [ u s ]
C o ll e c t o r C u r r e n t , I
C
2 . 0
2 . 4
2 0 0
2 5 0
3 0 0
C
3 5 0
4 0 0
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
C o ll e c t o r C u r r e n t , I [ A ]
Fig 1. Typical Output Characteristics
Fig 2. Turn-Off Characteristics vs.
Collector Current
0 . 9
0 . 8
0 . 7
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Rg = 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Rg = 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 0 0 0
S w it c h i n g L o s s [ m J ]
S w it c h i n g T i m e [ u s ]
E o ff
0 . 6
0 . 5
0 . 4
0 . 3
0 . 2
0 . 1
T o n
1 0 0
T r
E o n
1 0
2 0 0
2 5 0
3 0 0
C
3 5 0
4 0 0
2 0 0
2 5 0
3 0 0
C
3 5 0
4 0 0
C o ll e c t o r C u r r e n t , I [ A ]
C o ll e c t o r C u r r e n t , I [ A ]
Fig 3. Turn-On Characteristics vs.
Collector Current
Fig 4. Switching Loss vs. Collector Current
8
7
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Ic = 300A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 . 6
1 . 4
1 . 2
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Ic = 300A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
S w it c h i n g T i m e [ u s ]
S w it c h i n g T i m e [ u s ]
6
5
4
3
2
1
1 . 0
0 . 8
0 . 6
0 . 4
0 . 2
0 . 0
T o n
T o ff
T f
T r
1 0
2 0
3 0
G
4 0
5 0
1 0
2 0
3 0
G
4 0
5 0
G a t e R e sis t a n c e , R
[
Ω
]
G a t e R e sis t a n c e , R
[
Ω
]
Fig 5. Turn-Off Characteristics vs.
Gate Resistance
©2004 Fairchild Semiconductor Corporation
Fig 6. Turn-On Characteristics vs.
Gate Resistance
FMG2G300LS60E Rev. A
FMG2G300LS60E
1 5
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
Ic = 300A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 0 0 0
1 2
Common Emitter
I
C
= 300A
V
CC
= 300V
T
C
= 25 C
o
S w it c h i n g L o s s [ m J ]
G a t e - E m itt e r V o lt a g e , V
G E
[ V ]
E o ff
1 0 0
9
6
E o n
1 0
3
0
1 0
2 0
3 0
G
4 0
5 0
0
2 0 0
4 0 0
6 0 0
g
8 0 0
1 0 0 0
G a t e R e sis t a n c e , R
[
Ω
]
G a t e C h a r g e , Q
[ n C ]
Fig 7. Switching Loss vs. Gate Resistance
Fig 8. Gate Charge Characteristics
[ A ]
3 0 0
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
P e a k R e v e r s e R e c o v e r y C u rr e n t, I
[ A ]
rr
[ x 1 0 n s ]
R e v e r s e R e c o v e r y T i m e , T
4 0 0
2 0 0
Common Cathode
di/dt = 600A/
㎲
T
C
= 25
℃
T
C
= 100
℃
1 0 0
C u rr e n t, I
F
rr
2 0 0
I
rr
F o r w a r d
1 0 0
1 0
t
rr
0
0 . 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
2 . 8
5
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
F o r w a r d
V o lt a g e ,
V
F
[ V ]
F o r w a r d
C u rr e n t,
I
F
[ A ]
Fig 9. Forward Characteristics (diode)
Fig 10. Reverse Recovery Characteristics(diode)
©2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
Package Dimension
7PM-HA
40.0
±0.50
23.0
±0.50
23.0
±0.50
2-
Ø
6.5
±0.30
Mounting-Hole
G2
E2
13.0
±0.60
18.0
±0.60
26.0
±0.60
E1
G1
3-M5
80.0
±0.50
94.0
±0.50
3-10.0
±0.50
5.95
±0.60
Ø
1.3
8.00
±0.50
3-16.0
±0.50
2.80 -
0.50
*0.5t
+0.00
48.0
±0.60
28.0
±0.50
45.5
±0.50
30.0
-0.60
+0.20
Name Plate
©2004 Fairchild Semiconductor Corporation
22.0
-0.60
+0.20
FMG2G300LS60E Rev. A
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