HY51V64164A,HY51V65164A
4Mx16, Extended Data Out mode
2nd Generation
DESCRIPTION
This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS
DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
design allow this device to achieve high performance and low power dissipation. Optional features are access time(50 or
60ns) and refresh cycle(8K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s
advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and
high reliability.
FEATURES
Ÿ
Extended data out operation
Ÿ
Read-modify-write capability
Ÿ
Multi-bit parallel test capability
Ÿ
LVTTL(3.3V) compatible inputs and outputs
Ÿ
/CAS-before-/RAS, /RAS-only, Hidden and
Self refresh capability
Ÿ
Max. Active power dissipation
Speed
50
60
Ÿ
Refresh cycles
Part number
HY51V64164A
1)
HY51V65164A
2)
Refresh
8K
64ms
4K
128ms
Normal
L-part
8K refresh
396mW
324mW
4K refresh
504mW
432mW
Ÿ
JEDEC standard pinout
50-pin plastic TSOP-II (400mil)
Ÿ
Single power supply of 3.3
±
0.3V
Ÿ
Early write or output enable controlled write
Ÿ
Fast access time and cycle time
Speed
50
60
tRAC
50ns
60ns
tCAC
13ns
15ns
tHPC
20ns
25ns
1) Normal read / write, /RAS only refresh : 8K cycles / 64ms
/CAS-before-/RAS, Hidden refresh
: 4K cycles / 64ms
2) Normal read / write, /RAS only refresh : 4K cycles / 64ms
/CAS-before-/RAS, Hidden refresh
: 4K cycles / 64ms
ORDERING INFORMATION
Part Name
HY51V64164ATC
HY51V64164ALTC
HY51V64164ASLTC
HY51V65164ATC
HY51V65164ALTC
HY51V65164ASLTC
*SL : Self refresh with low power.
Refresh
8K
8K
8K
4K
4K
4K
Power
Package
50Pin TSOP-II
L-part
*SL-part
50Pin TSOP-II
50Pin TSOP-II
50Pin TSOP-II
L-part
*SL-part
50Pin TSOP-II
50Pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of
circuits described. No patent licences are implied
Hyundai Semiconductor
Rev.12/Sep.98
1
HY51V64164A,HY51V65164A
ABSOLUTE MAXIMUM RATING
Symbol
T
A
T
STG
V
IN,
V
OUT
V
CC
I
OS
P
D
T
SOLDER
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
CC
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
Ÿ
Time
Rating
0 to 70
-55 to 150
-0.5 to 6.0
-0.5 to 4.6
50
1
260
Ÿ
10
Unit
°C
°C
V
V
mA
W
°C
Ÿ
sec
Note
: Operation at or above Absolute Maximum Ratings could adversely affect device reliability and cause permanent
damage.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0°C to 70°C )
Symbol
V
CC
V
IH
V
IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
2.0
-0.3
2)
Typ
3.3
-
-
Max
3.6
V
CC+
0.3
1)
0.8
UNIT
V
V
V
Note
: All voltages are referenced to V
SS
.
1) 6.0V at pulse width 10ns which is measured at V
CC
.
2) -1.0V at pulse width 10ns which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
Symbol
I
LI
I
LO
Parameter
Input Leakage Current
(Any input)
Output Leakage Current
(Any input)
Output Low Voltage
Output High Voltage
Test condition
V
SS
≤
V
IN
≤
V
CC +
0.3
All other pins not under test
=
V
SS
V
SS
≤
V
OUT
≤
V
CC
/RAS&/CAS at V
IH
I
OL
= 2.0mA
I
OL
= -2.0mA
Min
-5
-5
-
2.4
Max
5
5
0.4
-
Unit
µA
µA
V
V
V
OL
V
OH
4Mx16,EDO DRAM
Rev.12/Sep.98
4
HY51V64164A,HY51V65164A
DC CHARACTERISTICS
(T
A
= 0°C to 70°C , V
CC
= 3.3
±
0.3V , V
SS
= 0V, unless otherwise noted.)
Symbol
Parameter
Test condition
Speed
Max. Current
8K refresh
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
Operating Current
LVTTL Standby
Current
/RAS-only Refresh
Current
EDO mode Current
CMOS Standby
Current
/CAS-before-/RAS
Refresh Current
Battery Back-up
Current (L-part)
/RAS, /CAS Cycling
t
RC =
t
RC(min.)
/RAS, /CAS
≥
V
IH
Other inputs
≥
V
SS
/RAS Cycling,/CAS
=
V
IH
t
RC =
t
RC(min.)
/CAS Cycling, /RAS
=
V
IL
t
HPC =
t
HPC(min.)
/RAS
=
/CAS
≥
V
CC -
0.2V
t
RC =
t
RC(min.)
50
60
50
60
L-part
50
60
50
60
110
90
1
110
90
120
100
500
300
140
120
4K refresh
140
120
1
140
120
130
110
500
300
140
120
mA
mA
mA
mA
µA
mA
Unit
I
CC7
V
IH =
V
CC -
0.2V, V
IL =
0.2V
/CAS
=
CBR cycling or 0.2V
/OE&/WE
=
V
IH =
V
CC -
0.2V
Address
=
Don’t care
DQ0~DQ15
=
Open, tRAS
≤
300ns
tRC=31.25uS
/RAS&/CAS
=
0.2V
Other pins are same as I
CC7
550
550
µA
I
CC8
Self Refresh Current
(L-part)
450
450
µA
Note
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on output loading and cycle rates(t
RC
and t
HPC
).
2. Specified values are obtained with output unloaded.
3. I
CC
is specified as an average current. In I
CC1
, I
CC3
, I
CC6
, address can be changed only once while /RAS=V
IL
. In I
CC4
,
address can be changed maximum once while /CAS=V
IH
withen one EDO mode cycle time t
HPC
.
4Mx16,EDO DRAM
Rev.12/Sep.98
5
51单片机
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