Datasheet> 器件分类 > 分立半导体> 二极管> SRM10SBT

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SRM10SBT: 产品描述Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1; 产品类别分立半导体二极管; 文件大小43KB，共2页; 制造商SSDI; 官网地址http://www.ssdi-power.com/

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SRM10SBT概述

Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1

SRM10SBT规格参数

参数名称	属性值
厂商名称	SSDI
包装说明	HERMETIC SEALED PACKAGE-1
针数	1
Reach Compliance Code	compliant
ECCN代码	EAR99
应用	GENERAL PURPOSE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	O-CEDB-G1
最大非重复峰值正向电流	375 A
元件数量	1
相数	1
端子数量	1
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	60 A
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
认证状态	Not Qualified
最大重复峰值反向电压	1000 V
最大反向恢复时间	10 µs
表面贴装	YES
端子形式	GULL WING
端子位置	END

SRM10SBT文档预览

PRELIMINARY

SOLID STATE DEVICES, INC.

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

SRM6SBT

thru

SRM12SBT

60 AMP

600 - 1200 VOLTS

STANDARD RECOVERY

RECTIFIER

SURFACE MOUNT BUTTON

Designer's Data Sheet

FEATURES:

•

Replaces DO-4 and DO-5

Standard Recovery

PIV to 1200 Volts

Low Reverse Leakage

Hermetically Sealed Void-Free Construction

Monolithic Single Chip Construction

High Surge Rating

Low Thermal Resistance

Available in Axial Lead Versions and in Reverse Polarity.

TX, TXV and Space Level Screening Available

PIND Testing not required on Void-Free Devices per

MIL-PRF-19500

Maximum Ratings

Peak Repetitive Reverse and

DC Blocking Voltage

SRM6SBT

SRM8SBT

SRM10SBT

SRM12SBT

SYMBOL

RRM

RWM

VALUE

600

800

1000

1200

UNITS

Volts

Average Rectified Forward Current

(Resistive Load, 60Hz, Sine Wave, T

= 100

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow

junction to reach equilibrium between pulses, T

= 25

Operating and Storage Temperature

Maximum Thermal Resistance

Junction to Case

Amps

FSM

Top & Tstg

2JC

375

-65 TO +175

0.6

Amps

C/W

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0035B

SRM6SBT

thru

SRM12SBT

Electrical Characteristics

Instantaneous Forward Voltage Drop

= 25

C, 300 - 500

:sec

Pulse)

Reverse Leakage Current

(Rated V

, 300:sec pulse minimum)

Junction Capacitance

= 10V

, T

= 25

C, f = 1MHz)

Reverse Recovery Time

= 500 mA, I

= 1 A, I

= 250 mA, T

= 25

CASE OUTLINE: SURFACE MOUNT BUTTON

= 20A

= 60A

= 25

= 100

PRELIMINARY

SOLID STATE DEVICES, INC.

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

SYMBOL

MAXIMUM

1.05

1.20

2.0

250

UNITS

:sec

POWER DERATING CURVE

PERCENT OF MAXIMUM FORWARD

CURRENT RATING (%)

100

125

150

175

200

131

CASE TEMPERATURE

(

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SRM10SBT相似产品对比

	SRM10SBT	SRM8SBT
描述	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1	Rectifier Diode, 1 Phase, 1 Element, 60A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1
厂商名称	SSDI	SSDI
包装说明	HERMETIC SEALED PACKAGE-1	HERMETIC SEALED PACKAGE-1
针数	1	1
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
应用	GENERAL PURPOSE	GENERAL PURPOSE
配置	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-CEDB-G1	O-CEDB-G1
最大非重复峰值正向电流	375 A	375 A
元件数量	1	1
相数	1	1
端子数量	1	1
最高工作温度	175 °C	175 °C
最低工作温度	-65 °C	-65 °C
最大输出电流	60 A	60 A
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON
认证状态	Not Qualified	Not Qualified
最大重复峰值反向电压	1000 V	800 V
最大反向恢复时间	10 µs	10 µs
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	END	END

SRM10SBT

SRM10SBT概述

SRM10SBT规格参数

SRM10SBT文档预览

SRM10SBT相似产品对比

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