Bulletin PD-20897 12/04
MUR1020CTPbF
Ultrafast Rectifier
Features
•
•
•
•
•
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
t
rr
= 25ns
I
F(AV)
= 10Amp
V
R
= 200V
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 149°C
Non Repetitive Peak Surge Current
Peak Repetitive Forward Current
(Rated V
R
, Square wave, 20 KHz), T
C
= 149°C
Operating Junction and Storage Temperatures
- 65 to 175
°C
Per Leg
Total Device
Per Leg
Per Leg
Max
200
5
10
50
10
Units
V
A
Case Styles
MUR1020CTPbF
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220
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MUR1020CTPbF
Bulletin PD-20897 12/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
-
V
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 5A, T
J
= 125°C
I
F
= 10A, T
J
= 125°C
I
F
= 10A, T
J
= 25°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
.
0.87 0.99
1.02 1.20
1.12 1.25
-
-
8
8.0
10
250
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
24
35
35
25
-
ns
I
F
= 1.0A, di
F
/dt = 50A/µs, V
R
= 30V
I
F
= 0.5A, I
R
= 1.0A, I
REC
= 0.25A
T
J
= 25°C
T
J
= 125°C
-
-
-
76
nC
-
A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 5A
V
R
= 160V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
3.3
5.0
33
-
Q
rr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Wt
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to CasePer Leg
Thermal Resistance, Junction to Ambient Per Leg
Thermal Resistance, Case to Heatsink
Weight
Min
- 65
- 65
-
-
-
-
-
Typ
-
-
-
-
0.5
2.0
0.07
-
-
Max
175
175
5
50
-
-
-
12
10
MUR1020CT
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
Mounting Torque
6.0
5.0
Marking Device
Mounting Surface, Flat, Smooth and Greased
2
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MUR1020CTPbF
Bulletin PD-20897 12/04
100
100
10
1
0.1
0.01
25˚C
TJ = 175˚C
150˚C
125˚C
100˚C
Instantaneous Forward Current - I
F
(A)
10
Reverse Current - I
R
(µA)
0.001
0.0001
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
0
40
80
120
160
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
100
Junction Capacitance - C
T
(pF)
T = 25˚C
J
1
10
0.1
0.2
1
0.4
0.6
0.8
1
1.2
1.4
1.6
1
10
100
1000
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
0.1
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
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MUR1020CTPbF
Bulletin PD-20897 12/04
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
7
RMS Limit
6
5
4
3
2
1
0
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
170
160
150
Square wave (D = 0.50)
Rated Vr applied
DC
140
see note (2)
130
0
2
4
6
8
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
0
1
2
3
4
5
6
7
8
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
50
I
F
= 10 A
I
F
= 5 A
160
140
120
100
Qrr ( nC )
I
F
= 10 A
I
F
= 5 A
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
40
trr ( ns )
30
80
60
20
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
40
20
0
100
di
F
/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
10
100
di
F
/dt (A/µs )
1000
1000
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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MUR1020CTPbF
Bulletin PD-20897 12/04
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
f
F
/dt
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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