LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
CE(SAT)
which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
6
5
4
1
2
3
Features
•
•
•
•
•
•
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.006 grams (approximate)
C
DDTB142JU_DIE
Q1
R2
B
PNP
470
R3
37K
E
R1
10K
S
Q2
NMOS
G
DSNM6047_DIE D
1
E_Q1
2
G_Q2
3
D_Q2
Fig. 2 Schematic and Pin Configuration
Sub-Component P/N
DDTB142JU_DIE
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1 (NOM)
10K
⎯
R2 (NOM)
470
⎯
R3 (NOM)
⎯
37K
Figure
2
2
Maximum Ratings, Total Device
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current
@T
A
= 25°C unless otherwise specified
Symbol
P
D
P
der
I
out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
T
J
,T
STG
R
θ
JA
Value
-55 to +150
625
Unit
°C
°C/W
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30658 Rev. 7 - 2
1 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
Symbol
V
CBO
V
CEO
V
CC
V
in
I
C
@T
A
= 25°C unless otherwise specified
Value
-50
-50
-50
+5 to -6
-200
Unit
V
V
V
V
mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain Gate Voltage (R
GS
≤1M
Ohm)
Gate-Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
Continuous
Pulsed (tp<50 uS)
Continuous (V
gs
= 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
S
Value
60
60
+/-20
+/-40
115
800
115
Unit
V
V
V
mA
mA
DS30658 Rev. 7 - 2
2 of 9
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LMN200B02
© Diodes Incorporated
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as I
CEO
)
ON CHARACTERISTICS
⎯
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
⎯
Equivalent On-Resistance*
R
CE(SAT)
⎯
60
DC Current Gain
h
FE
60
60
60
Input On Voltage
Output Voltage (equivalent to V
CE(SAT)
or V
O(ON)
)
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
Input Resistor (Base), +/- 30%
Pull-up Resistor (Base to Vcc supply), +/- 30%
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)
Collector Capacitance, (C
cbo
-Output Capacitance)
* Pulse Test: Pulse width, tp<300
μS,
Duty Cycle, d<=0.02
@T
A
= 25°C unless otherwise specified
Max
-100
-500
-1
⎯
⎯
-0.3
⎯
-500
-0.15
-0.2
-0.2
-0.25
-0.25
-0.3
1.5
⎯
⎯
⎯
⎯
⎯
-0.15
-28
-1.3
-3.6
-5.5
⎯
⎯
⎯
Unit
nA
nA
mA
V
V
V
V
nA
V
V
V
V
V
V
Ω
⎯
⎯
⎯
⎯
V
V
mA
V
V
KΩ
KΩ
⎯
Test Condition
V
CB
= -50V, I
E
= 0
V
CE
= -50V, I
B
= 0
V
EB
= -5V, I
C
= 0
I
C
= -10 uA, I
E
= 0
I
C
= -2 mA, I
B
= 0
V
CE
= -5V, I
C
= -100uA
V
CC
= -5V, V
B
= -0.05V,
R
L
= 1K
V
CC
= -50V, V
I
= 0V
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -50mA, I
B
= -5mA
I
C
= -20mA, I
B
= -1mA
I
C
= -100mA, I
B
= -10mA
I
C
= -200mA, I
B
= -10mA
I
C
= -200mA, I
B
= -20mA
I
C
= -200mA, I
B
= -10mA
V
CE
= -5V, I
C
= -20 mA
V
CE
= -5V, I
C
= -50 mA
V
CE
= -5V, I
C
= -100 mA
V
CE
= -5V, I
C
= -200 mA
V
O
= -0.3V, I
C
= -2 mA
V
CC
= -5V,
V
B
= -2.5V,
I
o
/I
I
= -50mA /-2.5mA
V
I
= -5V
V
CE
= -5V, I
C
= 200mA
I
C
= -50mA, I
B
= -5mA
I
C
= -80mA, I
B
= -8mA
⎯
⎯
⎯
Symbol
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
V
OH
I
O(OFF)
Min
⎯
⎯
⎯
-50
-50
⎯
-4.9
⎯
Typ
⎯
⎯
-0.5
⎯
⎯
-0.55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150
215
245
250
-0.7
-0.065
-9
-1.13
-3.2
-4.6
0.47
10
21
V
I(ON)
V
OL
I
i
V
BE(ON)
V
BE(SAT)
R2
R1
R1/R2
-2.45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
f
T
C
C
⎯
⎯
200
20
⎯
⎯
MHz
pF
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
V
CB
= -10V, I
E
= 0A,
f = 1MHz
DS30658 Rev. 7 - 2
3 of 9
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LMN200B02
© Diodes Incorporated
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV
DSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Gate Pull-Down Resistor, +/- 30%
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(on)
t
D(off)
⎯
⎯
⎯
⎯
⎯
C
iss
C
oss
C
rss
⎯
⎯
⎯
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
Min
60
⎯
⎯
⎯
@T
A
= 25°C unless otherwise specified
Typ
⎯
⎯
⎯
⎯
Max
⎯
1
0.95
-0.95
Unit
V
μA
mA
mA
Test Condition
V
GS
= 0V, I
D
= 10μA
V
GS
=0V, V
DS
= 60V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS(th)
V
DS(on)
I
D(on)
R
DS(on)
g
FS
R3
1
⎯
⎯
500
⎯
⎯
80
80
⎯
1.9
0.10
0.15
⎯
1.6
1.4
240
350
37
⎯
⎯
⎯
⎯
⎯
2.2
1.5
3.75
⎯
3
2
⎯
⎯
⎯
50
25
5
20
40
V
V
mA
Ω
mS
KΩ
pF
pF
pF
ns
ns
V
DS
= V
GS
, I
D
= 0.25mA
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 115mA
V
GS
= 10V,
V
DS
≥2
X
V
DS(ON)
V
GS
= 5V, ID = 50mA
V
GS
= 10V, ID = 500mA
V
DS
≥2
X
V
DS(ON)
, I
D
= 115 mA
V
DS
≥2
X
V
DS(ON)
, I
D
= 200 mA
⎯
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
V
DD
= 30V, V
GS
=10V,
I
D
= 200mA,
R
G
= 25 Ohm, R
L
= 150 Ohm
V
GS
= 0V, I
S
= 115 mA
⎯
⎯
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
Notes:
V
SD
I
S
I
SM
0.90
⎯
⎯
1.5
115
800
V
mA
mA
4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
350
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
(Note 3)
50
0
0
25
50
150
75
100 125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs.
Ambient Temperature (Total Device)
175
DS30658 Rev. 7 - 2
4 of 9
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LMN200B02
© Diodes Incorporated
Typical Pre-Biased PNP Transistor (Q1) Characteristics
V
CE(SAT)
, COLLECTOR VOLTAGE (V)
V
CE(SAT)
, COLLECTOR VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Fig. 4 V
CE(SAT)
vs. I
C
I
C
, COLLECTOR CURRENT (A)
Fig. 5 V
CE(SAT)
vs. I
C
V
BE(SAT)
, BASE EMITTER VOLTAGE (V)
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 V
BE(SAT)
vs. I
C
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 V
BE(ON)
vs. I
C
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 h
FE
vs. I
C
DS30658 Rev. 7 - 2
5 of 9
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V
BE(ON)
, BASE EMITTER VOLTAGE (V)
LMN200B02
© Diodes Incorporated
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