GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The MOC8204 device consists of a gallium arsenide infrared emitting diode
optically coupled to a high voltage, silicon, phototransistor detector in a
standard 6-pin DIP package. It is designed for high voltage applications and
is particularly useful in copy machines and solid state relays.
MOC8204
APPLICATIONS
•
•
•
•
Copy Machines
Interfacing and coupling systems of different potentials and impedances
Monitor and Detection Circuits
Solid State Relays
SCHEMATIC
1
6
2
5
3
NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Input-Output Isolation Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration
(1)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Forward Current - Peak (Pulse Width = 1µs, 330 pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
V
ISO
P
D
I
F
I
F
(pk)
P
D
V
CEO
V
CBO
V
ECO
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
7500
250
2.94
60
1.2
120
1.41
400
400
7
150
1.76
Units
°C
°C
°C
Vac(pk)
mW
mA
A
mW
mW/°C
V
V
V
mW
mW/°C
2001 Fairchild Semiconductor Corporation
DS300269
3/22/01
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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
MOC8204
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, R
BE
= 1M!)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Dark Current
T
A
= 25°C
T
A
= 100°C
(R
BE
= 1M!, V
CE
= 300 V)
I
CEO
—
—
—
—
100
250
nA
µA
(I
C
= 100 µA)
(I
E
= 100 µA)
Test Conditions
(I
F
= 10 mA)
(V
R
= 6.0 V)
(V = 0, f =1 MHz)
Symbol
V
F
I
R
C
J
BV
CEO
BV
CBO
BV
EBO
Min
—
—
—
400
400
7
Typ
(1)
1.2
—
18
—
—
—
Max
15
10
—
—
—
—
Unit
V
µA
pF
V
V
V
ISOLATION CHARACTERISTICS
Characteristic
Output Collector Current
Test Conditions
Symbol
V
(SAT)
V
ISO
R
ISO
C
ISO
(V
CC
= 10 V, I
C
= 2 mA, R
L
= 100!)
t
ON
t
OFF
—
—
Min
2 (20)
—
5300
7300
—
Typ
(1)
—
—
—
—
10
11
0.2
5
5
—
—
Max
—
0.4
—
—
—
Units
mA(%)
V
V
AC(RMS)
V
AC(PEAK)
!
pf
µs
(V
CE
= 10 V, I
F
= 10 mA, R
BE
= 1M!) I
C
(CTR)
(2)
Collector-Emitter Saturation Voltage (I
C
= 0.5 mA, I
F
= 10 mA, R
BE
= 1M!)
Input-Output Isolation Voltage
(3)
Isolation Resistance
(3)
Isolation Capacitance
(1)
Turn-On Time
Turn-Off Time
(I
I-O
≤
1
µA,
Time = 1min)
Notes
1. Alway design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For this test LED pins 1 and 2 are common and phototransistor Pins 4,5 and 6 are common.
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3/22/01
DS300269
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
MOC8204
50
ICER, OUTPUT CURRENT (mA)
ICER, OUTPUT CURRENT (mA)
20
10
5
2
1
0.5
0.2
0.1
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
50
RBE = 106
Ω
VCE = 10 V
TA = 25°C
RBE = 106
Ω
VCE = 10 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
20
10
5
2
1
–60
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
Figure 1. Output Current versus LED Input Current
Figure 2. Output Current versus Temperature
40
ICER , OUTPUT CURRENT (mA)
10
5.0
1.0
5
1
0.05
RBE = 106
Ω
TA = 25°C
VF, FORWARD VOLTAGE (VOLTS)
IF = 50 mA
IF = 10 mA
IF = 5 mA
2
1.8
PULSE ONLY
PULSE OR DC
1.6
1.4
TA = –55°C
25°C
100°C
1
10
100
IF, LED FORWARD CURRENT (mA)
1000
1.2
1
0.01
0.005
0.1
0.5 1
5 10
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
Figure 3. Output Characteristics
300
IF = 50 mA
240
180
RBE = 106
Ω
VCE = 10 V
Figure 4. Forward Characteristics
ICBO, COLLECTOR-BASE CURRENT (
µ
A)
1000
ICER , DARK CURRENT (nA)
100
VCE = 300 V
VCE = 100 V
10
VCE = 50 V
1
RBE = 106
Ω
120
60
0
–60
–40
IF = 10 mA
IF = 5 mA
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
20
30
40
50
60
70
80
90
100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Collector–Base Current versus Temperature
Figure 6. Dark Current versus Temperature
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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
MOC8204
Package Dimensions (Through Hole)
PIN 1
ID.
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
3
0.270 (6.86)
0.240 (6.10)
2
1
PIN 1
ID.
0.270 (6.86)
0.240 (6.10)
SEATING PLANE
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
4
5
6
0.070 (1.78)
0.045 (1.14)
0.300 (7.62)
TYP
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.020 (0.51)
MIN
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.300 (7.62)
TYP
0.020 (0.51)
MIN
0.100 (2.54)
TYP
0.016 (0.41)
0.008 (0.20)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40) MIN
0.315 (8.00)
MIN
0.405 (10.30)
MAX
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0° to 15°
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4”Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.270 (6.86)
0.240 (6.10)
0.070 (1.78)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.415 (10.54)
0.100 (2.54)
0.030 (0.76)
SEATING PLANE
0.295 (7.49)
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.004 (0.10)
MIN
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0° to 15°
0.400 (10.16)
TYP
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DS300269
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
MOC8204
ORDERING INFORMATION
Option
R2
S
SD
SDL
W
300
300W
3S
3SD
Order Entry Idenifier
.R2
.S
.SD
.SDL
.W
.300
.300W
.3S
.3SD
Description
Opto Plus Reliability Conditioning
Surface Mount Lead Bend
Surface Mount; Tape and reel
Surface Mount; Tape and reel
0.4” Lead Spacing
VDE 0884
VDE 0884, 0.4” Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape & Reel
QT Carrier Tape Specifications
12.0 ± 0.1
4.85 ± 0.20
4.0 ± 0.1
0.30 ± 0.05
4.0 ± 0.1
Ø1.55 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
13.2 ± 0.2
16.0 ± 0.3
9.55 ± 0.20
0.1 MAX
10.30 ± 0.20
Ø1.6 ± 0.1
User Direction of Feed
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