2SK2158(0)-T1B-A
参数名称 | 属性值 |
Brand Name | Renesas |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
零件包装代码 | MM |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
制造商包装代码 | PLSP0003ZD-A3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
Factory Lead Time | 1 week |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 50 V |
最大漏极电流 (ID) | 0.1 A |
最大漏源导通电阻 | 20 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
2SK2158(0)-T1B-A | 2SK2158 | 2SK2158-T2B-A | 2SK2158-T1B-A | 2SK2158-T2B-AT | 2SK2158-T1B-AT | 2SK2158(0)-T1B-AT | |
---|---|---|---|---|---|---|---|
描述 | 2SK2158(0)-T1B-A | 100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2SK2158-T2B-A | 2SK2158-T1B-A | 2SK2158-T2B-AT | 2SK2158-T1B-AT | 2SK2158(0)-T1B-AT |
是否无铅 | 不含铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 不符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | compli | unknow | unknow | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
最大漏极电流 (ID) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
最大漏源导通电阻 | 20 Ω | 20 Ω | 20 Ω | 20 Ω | 20 Ω | 20 Ω | 20 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Brand Name | Renesas | - | Renesas | Renesas | Renesas | Renesas | Renesas |
零件包装代码 | MM | - | MM | MM | MM | MM | MM |
针数 | 3 | - | 3 | 3 | 3 | 3 | 3 |
制造商包装代码 | PLSP0003ZD-A3 | - | PLSP0003ZD-A3 | PLSP0003ZD-A3 | PLSP0003ZD-A3 | PLSP0003ZD-A3 | PLSP0003ZD-A3 |
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