MIMD10A
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
One 500mA PNP and One 100mA NPN
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 3 and 4)
A
C
2
B
1
E
1
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
⎯
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
NEW P RODUCT
ROD UC T
B
C
D
F
H
M
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Finish - Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Code: C73 See Page 4
Ordering & Date Code: See Page 4
Terminal Connections: See Diagram
Weight: 0.015 grams (approximate)
E
2
B
2
C
1
0.65 Nominal
H
K
J
K
L
M
α
J
D
F
L
All Dimensions in mm
T
r2
R
1
R
2
R
1
T
r1
P/N
MIMD10A
Tr1
Tr2
R1
0.1K
10K
R2
10K
-
SCHEMATIC DIAGRAM
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
V
IN
I
O
Value
-50
-5 to +5
-500
Unit
V
V
mA
Maximum Ratings PNP Section Tr1
Characteristic
Supply Voltage
Input Voltage
Output Current
Maximum Ratings NPN Section Tr2
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
50
5
100
Unit
V
V
V
mA
Maximum Ratings - Total
Characteristic
Power Dissipation
@T
A
= 25°C unless otherwise specified
(Note 2)
Symbol
P
d
T
j
, T
STG
Value
200
-55 to +150
Unit
mW
°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
No purposefully added lead.
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30381 Rev. 8 - 2
1 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
Electrical Characteristics PNP Section Tr1
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Min
-0.3
⎯
⎯
⎯
⎯
68
⎯
Typ
⎯
⎯
-0.1
⎯
⎯
⎯
200
Max
⎯
-1.5
-0.3
-25
-0.5
⎯
⎯
V
mA
μA
⎯
Unit
V
Test Condition
V
CC
= -5V, I
O
= -100μA
V
O
= 0.3, I
O
= -100mA
I
O
= -100mA/-5mA
V
I
= -2V
V
CC
= -50V, V
I
= 0V
⎯
Symbol
V
l(off)
V
l(on)
NEW PRODUCT
V
O(on)
I
l
I
O(off)
G
l
f
T
MHz V
CE
= -10V, I
E
= -50mA, f = 100MHz
Electrical Characteristics NPN Section Tr2
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Min
50
50
5
⎯
⎯
⎯
100
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
250
250
Max
⎯
⎯
⎯
0.5
0.5
0.3
600
⎯
Unit
V
V
V
μA
μA
V
⎯
MHz
I
C
= 50μA
I
C
= 1mA
I
E
= 50μA
V
CB
= 50V
V
EB
= 4V
I
C
/I
B
= 10mA / 1.0mA
I
C
= 1mA, V
CE
= 5V
V
CE
= 10V, I
E
= -5mA, f = 100MHz
Test Condition
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
DS30381 Rev. 8 - 2
2 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
Typical Curves – Tr2
V
CE(SAT)
, MAXIMUM COLLECTOR VOLTAGE (V)
250
P
D
, POWER DISSIPATION (MILLIWATTS)
(TOTAL PACKAGE)
1
I
C
/I
B
= 10
200
0.1
75
°
C
-25
°
C
25
°
C
NEW PRODUCT
150
100
0.01
50
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Derating Curve
150
0.001
0
20
40
10
30
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
50
1,000
h
FE
, DC CURRENT GAIN (NORMALIZED)
4
I
E
= 0mA
100
C
OB
, CAPACITANCE (pF)
3
2
10
1
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
100
0
0
10
15
25
20
5
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
30
100
75°C
10
V
O
= 0.2
I
C
, COLLECTOR CURRENT (mA)
10
V
in
, INPUT VOLTAGE (V)
0
1
5
6
7
8
9
3
4
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current vs. Input Voltage
2
10
1
1
0.1
0.01
0.001
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
50
DS30381 Rev. 8 - 2
3 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
Ordering Information
(Note 5)
Device
MIMD10A-7-F
Notes:
Packaging
SOT-363
Shipping
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
C73
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2003
P
Jan
1
2004
R
Feb
2
Mar
3
2005
S
Apr
4
2006
T
May
5
2007
U
Jun
6
2008
V
Jul
7
2009
W
Aug
8
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30381 Rev. 8 - 2
4 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
