Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220Fa package
·Complement
to type 2SA1396
·Low
collector saturation voltage
·High
switching speed
APPLICATIONS
·Switching
regulator
·DC-DC
converter
·High
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SC3568
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current(DC)
Collector current-peak
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
100
7
10
20
5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=5A ;I
B
=0.5A;L=1mH
I
C
=5A ;I
B
=0.5A
I
C
=5A ;I
B
=0.5A
V
CB
=100V; I
E
=0
V
CE
=100V;V
BE(OFF)
=-1.5V
T
a
=125℃
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
40
40
20
MIN
100
TYP.
2SC3568
MAX
UNIT
V
0.6
1.5
10
10
1.0
10
V
V
μA
μA
mA
μA
200
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A ;I
B1
=-I
B2
=0. 5A
V
CC
≈50V;R
L
=10Ω
0.5
1.5
0.5
μs
μs
μs
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3568
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3568
4
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