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JANS1N5618

产品描述Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, 102, 2 PIN
产品类别分立半导体    二极管   
文件大小458KB,共3页
制造商SENSITRON
官网地址http://www.sensitron.com/
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JANS1N5618概述

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, 102, 2 PIN

JANS1N5618规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称SENSITRON
包装说明E-LALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY, METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JESD-30 代码E-LALF-W2
最大非重复峰值正向电流50 A
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Qualified
参考标准MIL-19500
最大重复峰值反向电压600 V
最大反向恢复时间2 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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1N5614/US thru 1N5622/US
Standard
STANDARD RECOVERY
RECTIFIERS
______________________________________________________________________________________
TECHNICAL DATA
A
V AI L AB L E AS
DATA SHEET 874, REV. C.3
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*, SS*
SENSITRON
___
SEMICONDUCTOR
Standard Recovery Rectifiers
Qualified per MIL-PRF-19500/427
DESCRIPTION:
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per
MIL-PRF-19500/427 and is targeted for commerical and military aircraft, space, military vehicles,
shipboard markets and all high reliability applications.
FEATURES / BENEFITS
Hermetic, non-cavity glass package
Category I Metallurgically bonded
All parts are 100% hot solder dipped
JAN/ JANTX/JANTXV available per
MIL-PRF-19500/427
“JANS Plus” removes atypical/out of family V
F
MAXIMUM RATINGS
Operating and Storage Temperature: -65 C to +175 C
Solder temperature: 260 C for 10s (max)
Thermal Resistance: 36 C (junction to lead)
Thermal Resistance: 13 C (junction to endcap)
Forward surge current: 30A @ 8.3 ms half-sine
o
o
o
o
o
ELECTRICAL CHARACTERISTICS
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
MIN
BREAKDOWN
VOLTAGE
AVG
RECTIFIED
CURRENT
Amps
55C
100C
MAXIMUM
REVERSE
CURRENT
@ PIV
Amps
25C
100C
MAX. PEAK
FORWARD
VOLTAGE
(PULSED)
VF @ 3A
V
MAX.
SURGE
CURRENT
1
IFSM
Amps
MAXIMUM
REVERSE
RECOVERY
TIME
2
Trr
nsec
Volts
Volts
1N5614/US
200
220
TECHNICAL DATA
1N5616/US
400
440
DATA SHEET 874, REV. C.2
1N5618/US
600
660
1N5620/US
800
880
1N5622/US
1000
1100
Note 1: I
o
= 1A, 8ms surge
GRAPHS
Note 2: I
F
=0.5A, I
RM
=1A, I
r(REC)
=.25A
1.0
.750
.5
25
1.3
30
2000
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer
fabrication through assembly and testing using our internal specification.
©2012 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com

 
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